A Load–Pull Characterization Technique Accounting for Harmonic Tuning

Vadalà, Valeria; Raffo, Antonio; Falco, Sergio Di; Bosi, Gianni; Nalli, Andrea; Vannini, G.

doi:10.1109/tmtt.2013.2262803

Cited by 53 publications

(28 citation statements)

References 29 publications

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“…The aim is investigating and comparing the electrical performance of the device under two different classes of 978-1-4673-6496-6/15/$31.00 ©2015 IEEE operation exploiting harmonic manipulation, i.e., TL [2] and Class F [3], in order to experimentally verify the theoretical data predicted by simplified models and, at the same time, give a validation of the low-frequency methodology used for tests. The measurement setup is based on multi-harmonic excitations [7], [8]: a f 0 = 2 MHz fundamental frequency is conveniently adopted in order to operate above the cut-off of the low-frequency dispersive effects [9], and to neglect the transistor linear and nonlinear reactive phenomena. Such a setup operates as a vector multi-harmonic active load-pull system: by controlling the amplitude of gate and drain incident waveforms and their relative phase, different load terminations can be arbitrarily synthesized at the fundamental and harmonic frequencies for a given bias condition.…”

Section: Resultsmentioning

confidence: 99%

“…In this work, by using a low-frequency multi-harmonic load-pull setup [7], [8], harmonic manipulation at the currentgenerator plane is applied to a GaN transistor, and evaluated in different loading conditions, namely Tuned Load (TL) and Class F [2], [3]. In particular, on the basis of experimental data, we demonstrate the effectiveness of the theoretical approaches and highlight the importance of synthesizing the required harmonic impedances at the correct reference plane.…”

Section: Introductionmentioning

confidence: 93%

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Theoretical consideration on harmonic manipulated amplifiers based on experimental data

Raffo

Colantonio

Cipriani

et al. 2015

2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop (INMMiC)

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-This contribution aims at the experimental confirmation of the advantages of the harmonic manipulation theory, using a low-frequency low-cost characterization setup. A 0.5-µm 10x100-µm (1-mm gate periphery) GaN HEMT has been characterized synthesizing at the current-generator plane different load conditions, realizing tuned-load and Class-F operation. The measurements clearly demonstrate the importance of by synthesizing the required loads at the correct reference plane, giving an experimental proof of the performance predicted by theoretical analysis.Index Terms -FET, harmonic manipulation, integrated circuit measurements, microwave power amplifier, semiconductor device measurements.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 93%

Theoretical consideration on harmonic manipulated amplifiers based on experimental data

Raffo

Colantonio

Cipriani

et al. 2015

2015 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop (INMMiC)

Self Cite

View full text Add to dashboard Cite

show abstract

“…The amplifier is designed for a fundamental frequency of 990 MHz. The drain bias (V DD ) is 30 V and the gate bias (V GG ) is −2.6 V. The optimum load and source impedances at the fundamental frequency were found using source and load pull [21] test benches in the simulator. The transmission line elements TL101 and TL102 in Figure 4 implement the fundamental frequency source match, and the transmission lines TL109 and TL110 implement the fundamental frequency output match.…”

Section: Simulation Experimentsmentioning

confidence: 99%

Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

Abbasian¹,

Johnson²

2015

PIER C

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Abstract-In this paper, the design of a class-F radio frequency power amplifier with a multiharmonic input transmission line network is presented. Harmonic signal components at the gate come from several sources including nonlinear device capacitances and imperfect output harmonic terminations that create harmonic components that are fed back to the gate through the gate-drain capacitance. The effect of these harmonic generation mechanisms and the potential to shape the gate waveform to improve power efficiency are investigated. The study shows that a second harmonic short is most beneficial and the effect of a third harmonic termination is less significant. The concepts are applied to the design of a 10 W GaN class-F amplifier and the design is supported by theoretical, simulation and experimental results. The fabricated design has a measured drain efficiency of 78.8% at an output power of 40.5 dBm for a frequency of 990 MHz. The amplifier was also tested with a 8.8 dB peak-to-average power ratio 5 MHz WCDMA signal. With the modulated signal, the adjacent channel power ratio was −33.1 dBc at a drain efficiency of 46.1% without predistortion correction.

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“…Under the condition of given frequency, source/load impedance is tuned by tuner, at the same time input/output power is measured by power meter. Maximum transmission power is obtained after data processing [8][9][10]. Based on the calibration data before measurement, we can get scattering parameters of the DUT at this frequency.…”

Section: Principlementioning

confidence: 99%

A New Type of High-Power Microwave Impedance Tuner Based on Load-Pull With a Rapid Calibration Method

Cheng¹,

Sun²,

Wang³

et al. 2014

PIER C

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Abstract-For the measurement of microwave device in high-power, traditional methods are inefficient, inaccurate and not on-line real-time measurement. A new type of high-power microwave impedance tuner (26.5 GHz ∼ 40 GHz) based on load-pull technique and a corresponding rapid calibration method based on curve fitting are proposed. A new structure using increased width rectangular waveguide slotted in the center is adopted as the main transmission line. In order to prevent the leak of electromagnetic waves transferring in rectangular waveguide, two choke grooves are added in upper cover plate of the waveguide cavity. The results (standing wave ratio range of 1.02 ∼ 10.98, insertion loss of 0.063 dB at minimum standing wave ratio) show by practical measurement that this structure and method are feasible. The device can meet the requirement of design, and the new method has less time for calibration.

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A Load–Pull Characterization Technique Accounting for Harmonic Tuning

Cited by 53 publications

References 29 publications

Theoretical consideration on harmonic manipulated amplifiers based on experimental data

Theoretical consideration on harmonic manipulated amplifiers based on experimental data

Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

A New Type of High-Power Microwave Impedance Tuner Based on Load-Pull With a Rapid Calibration Method

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