A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides

Pettinari, G.; Gerardino, A.; Businaro, Luca; Polimeni, A.; Capizzi, M.; Hopkinson, M.; Rubini, S.; Biccari, Francesco; Intonti, Francesca; Vinattieri, A.; Gurioli, Massimo; Felici, Marco

doi:10.1016/j.mee.2016.12.003

Cited by 10 publications

(25 citation statements)

References 16 publications

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“…Inverted Pyramids [11] InGaAs/GaAs <50 1.4 Pyramids [13,14] InAs/InP 50 50 Nanoholes [16,17] InAs/GaAs 80 70 Spatially selective H incorporation [28,29] GaAsN/GaAs 20 30 Spatially selectiveH removal [30] GaAsN/GaAs <100 20 In this review, we report on an innovative approach we developed for the fabrication of site-controlled QDs, which are able to emit down to the single-photon regime. Our approach is based on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductors (e.g., GaAsN) [28][29][30]. Our fabrication strategy, at variance with the approaches proposed so far in the literature that rely on complex growth procedures often followed by cumbersome processing steps, starts from standard dilute-nitride quantum well samples and acts at a post-growth level.…”

Section: Technique Qd Materials ∆X (Nm) ∆E (Mev)mentioning

confidence: 99%

“…That approach is very versatile, post-growth, and naturally suited for the integration of QDs in photonic structures. The approach acts on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductors on a nanometer scale, as will be discussed in the following sections [28,30,79,80].…”

Section: A Novel Approach For Site-controlled Quantum Emitter Fabricamentioning

confidence: 99%

“…The amplitude of the zero-delay peak is well below the threshold value of 0.5, which points to the emission of single photons by the GaAsN QD. Panels (a-c) were adapted with permission from [28]. Copyright 2017 Elsevier.…”

Section: Qd Fabrication By Spatially Selective Hydrogen Incorporationmentioning

confidence: 99%

“…The methods presented here for the realization of dilute nitride-based, site-controlled quantum emitters rely on top-down approaches that provide clear advantages over current state-of-the-art techniques in terms of flexibility and because they open the way to a unique possibility to fabricate QDs in specified points of an existing, optimized photonic structure. In particular, the spatially selective hydrogen incorporation described in Section 3.1 has already been applied successfully to the fabrication of a QD-PhC cavity system, in which the weak-coupling regime has been observed [28,29]. These recent results are reviewed in the following.…”

Section: Quantum Emitter Integration In Photonic Crystal Cavitiesmentioning

confidence: 99%

“…Further details on the fabrication process can be found in Ref. [28]. We want to stress here that a QD-PhC integrated system might also be realized by using the spatially selective hydrogen-removal approach presented in Section 3.2.…”

Section: Lithographic Approach For Qd-phc Cavity Integrationmentioning

confidence: 99%

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Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities

et al. 2018

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We review an innovative approach for the fabrication of site-controlled quantum emitters (i.e., single-photon emitting quantum dots) based on the spatially selective incorporation and/or removal of hydrogen in dilute nitride semiconductors (e.g., GaAsN). In such systems, the formation of stable N-H complexes removes the effects that nitrogen has on the alloy properties, thus enabling the in-plane engineering of the band bap energy of the system. Both a lithographic approach and/or a near-field optical illumination-coupled to the ultra-sharp diffusion profile of H in dilute nitrides-allow us to control the hydrogen implantation and/or removal on a nanometer scale. This, eventually, makes it possible to fabricate site-controlled quantum dots that are able to emit single photons on demand. The strategy for a deterministic spatial and spectral coupling of such quantum emitters with photonic crystal cavities is also presented.Photonics 2018, 5, 10 2 of 18 etched in a GaAs substrate [8][9][10], which gives a position accuracy of about 50 nm [11]. Preferential sites for QD nucleation can also be defined by growing InP pyramids by selective-area epitaxy [12][13][14] or by patterning the substrate with nano-hole arrays [15][16][17][18][19], with a spatial accuracy better than 50 nm and 80 nm, respectively, and a possible integration with photonic devices. The main characteristics of those site-controlled QD fabrication techniques are reported in Table 1. Other approaches to the fabrication of site-controlled QDs include the self-organization of individual InAs QDs by scanning tunneling probe-assisted nanolithography [20], the "vicinal substrate" approach [21], the nucleation of InAs QDs on strain modulated buffer layers grown on submicron mesa arrays [22], and quantum-well etching [23]. All the techniques not included in Table 1, however, are either incompatible with the integration with optical micro-cavities, since they are characterized by an insufficient spatial accuracy, or not really scalable, and therefore unsuitable for future applications in quantum information technology.Different lithographic strategies have also been developed to deterministically fabricate a photonic device around a post-selected, self-assembled QD [2,[24][25][26]. These techniques, which can reach a spatial accuracy up to 50 nm, avoid in principle the need for site-controlled QDs. However, they are intrinsically not scalable-and therefore not suitable for the mass production-although strategies for increasing the number of implemented devices within a given processing time are being investigated [27].

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Section: Technique Qd Materials ∆X (Nm) ∆E (Mev)mentioning

confidence: 99%

Section: A Novel Approach For Site-controlled Quantum Emitter Fabricamentioning

confidence: 99%

Section: Qd Fabrication By Spatially Selective Hydrogen Incorporationmentioning

confidence: 99%

Section: Quantum Emitter Integration In Photonic Crystal Cavitiesmentioning

confidence: 99%

Section: Lithographic Approach For Qd-phc Cavity Integrationmentioning

confidence: 99%

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Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities

et al. 2018

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Site‐Controlled Single‐Photon Emitters Fabricated by Near‐Field Illumination

et al. 2018

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Many of the most advanced applications of semiconductor quantum dots (QDs) in quantum information technology require a fine control of the QDs' position and confinement potential, which cannot be achieved with conventional growth techniques. Here, a novel and versatile approach for the fabrication of site-controlled QDs is presented. Hydrogen incorporation in GaAsN results in the formation of N-2H and N-2H-H complexes, which neutralize all the effects of N on GaAs, including the N-induced large reduction of the bandgap energy. Starting from a fully hydrogenated GaAs/GaAsN:H/GaAs quantum well, the NH bonds located within the light spot generated by a scanning near-field optical microscope tip are broken, thus obtaining site-controlled GaAsN QDs surrounded by a barrier of GaAsN:H (laterally) and GaAs (above and below). By adjusting the laser power density and exposure time, the optical properties of the QDs can be finely controlled and optimized, tuning the quantum confinement energy over more than 100 meV and resulting in the observation of single-photon emission from both the exciton and biexciton recombinations. This novel fabrication technique reaches a position accuracy <100 nm and it can easily be applied to the realization of more complex nanostructures.

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Photonic Jet Writing of Quantum Dots Self‐Aligned to Dielectric Microspheres

et al. 2021

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Owing to their ability to generate non‐classical light states, quantum dots (QDs) are very promising candidates for the large‐scale implementation of quantum information technologies. However, the high photon collection efficiency demanded by these technologies may be impossible to reach for “standalone” semiconductor QDs, embedded in a high‐refractive index medium. In this work a novel laser writing technique is presented, enabling the direct fabrication of a QD self‐aligned—with a precision of ±30 nm—to a dielectric microsphere. The presence of the microsphere leads to an enhancement of the QD luminescence collection by a factor 7.3 ± 0.7 when an objective with 0.7 numerical aperture is employed. This technique exploits the possibility of breaking the N−H bonds in GaAs1−xNx:H by a laser light, obtaining a lower‐bandgap material, GaAs1−xNx. The microsphere, deposited on top of a GaAs1−xNx:H/GaAs quantum well, is used to generate a photonic nanojet, which removes hydrogen exactly below the microsphere, creating a GaAs1−xNx QD at a predefined distance from the sample surface. Second‐order autocorrelation measurements confirm the ability of the QDs obtained with this technique to emit single photons.

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A lithographic approach for quantum dot-photonic crystal nanocavity coupling in dilute nitrides

Cited by 10 publications

References 16 publications

Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities

Site-Controlled Quantum Emitters in Dilute Nitrides and their Integration in Photonic Crystal Cavities

Site‐Controlled Single‐Photon Emitters Fabricated by Near‐Field Illumination

Photonic Jet Writing of Quantum Dots Self‐Aligned to Dielectric Microspheres

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