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The electron transport layer (ETL) plays a fundamental role in perovskite solar cells. Recently, graphene-based ETLs have been proved to be good candidate for scalable fabrication processes and to achieve higher carrier injection with respect to most commonly used ETLs. In this work we experimentally study the effects of different graphene-based ETLs in sensitized MAPI solar cells. By means of time-integrated and picosecond time-resolved photoluminescence techniques, the carrier recombination dynamics in MAPI films embedded in different ETLs is investigated. Using graphene doped mesoporous TiO 2 (G+mTiO 2 ) with the addition of a lithium-neutralized graphene oxide (GO-Li) interlayer as ETL, we find that the carrier collection efficiency is increased by about a factor two with respect to standard mTiO 2 . Taking advantage of the absorption coefficient dispersion, we probe the MAPI layer morphology, along the thickness, finding that the MAPI embedded in the ETL composed by G+mTiO 2 plus GO-Li brings to a very good crystalline quality of the MAPI layer with a trap density about one order of magnitude lower than that found with the other ETLs. In addition, this ETL freezes MAPI at the tetragonal phase, regardless of the temperature. Graphene-based ETLs can open the way to significant improvement of perovskite solar cells.

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Many of the most advanced applications of semiconductor quantum dots (QDs) in quantum information technology require a fine control of the QDs' position and confinement potential, which cannot be achieved with conventional growth techniques. Here, a novel and versatile approach for the fabrication of site-controlled QDs is presented. Hydrogen incorporation in GaAsN results in the formation of N-2H and N-2H-H complexes, which neutralize all the effects of N on GaAs, including the N-induced large reduction of the bandgap energy. Starting from a fully hydrogenated GaAs/GaAsN:H/GaAs quantum well, the NH bonds located within the light spot generated by a scanning near-field optical microscope tip are broken, thus obtaining site-controlled GaAsN QDs surrounded by a barrier of GaAsN:H (laterally) and GaAs (above and below). By adjusting the laser power density and exposure time, the optical properties of the QDs can be finely controlled and optimized, tuning the quantum confinement energy over more than 100 meV and resulting in the observation of single-photon emission from both the exciton and biexciton recombinations. This novel fabrication technique reaches a position accuracy <100 nm and it can easily be applied to the realization of more complex nanostructures.

The present work reports the application of RF-magnetron sputtering technique to realize CsPbBr 3 70 nm thick films on glass substrate by means of a one-step procedure. The obtained films show highly uniform surface morphology and homogeneous thickness as evidenced by AFM and SEM investigations. XRD measurements demonstrate the presence of two phases: a dominant orthorhombic CsPbBr 3 and a subordinate CsPb 2 Br 5 . Finally, XPS data reveals surface bromine depletion respect to the stoichiometrical CsPbBr 3 composition, nevertheless photoluminescence spectroscopy results confirm the formation of a highly luminescent film. These preliminary results demonstrate that our approach could be of great relevance for easy fabrication of large area perovskite thin films. Future developments, based on this approach, may include the realization of multijunction solar cells and multicolor light emitting devices.

We present a detailed experimental investigation of the carrier recombination dynamics in CsPbBr 3 films by means of picosecond time-resolved photoluminescence. Temperaturedependent measurements show that carrier capture and release from the nanocrystals (NCs) surfaces determine the observed increase of the recombination lifetime with the increase of temperature. This result opens the way to probe the surface of the NCs, which is of the utmost relevance for optoelectronic applications, and to eventually give feedback for surface treatments of NCs.