A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

Cui, Jie; Chen, Lei; Zhao, Peng; Xu, Ning; Liu, Yi

doi:10.1088/1674-4926/35/6/065005

Cited by 5 publications

(3 citation statements)

References 2 publications

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“…In [7], the measured spurious levels were typically better than 120 dBm and 97 dBm on a 100-kHz resolution bandwidth in Rx and Tx modes, respectively. In [15], it was reported that the measured spurious levels were typically better than 110 and 91 dBm in Rx and Tx modes. For the commercial product PE42556 of Peregrine Semiconductor, there is an option to disable the internal negative voltage generator to reduce the spurious level than 116 dBm.…”

Section: New Biasing Strategy Without Negative Bias Voltagementioning

confidence: 99%

A Stacked-FET Linear SOI CMOS Cellular Antenna Switch With an Extremely Low-Power Biasing Strategy

Kim

et al. 2015

IEEE Trans. Microwave Theory Techn.

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A stacked field-effect transistor (FET) linear cellular antenna switch adopting a transistor layout with odd-symmetrical drain-source metal wiring and an extremely low-power biasing strategy has been implemented in silicon-on-insulator CMOS technology. A multi-fingered switch-FET device with odd-symmetrical drain-source metal wiring is adopted herein to improve the insertion loss (IL) and isolation of the antenna switch by minimizing the product of the on-resistance and off-capacitance. To remove the spurious emission and digital switching noise problems from the antenna switch driver circuits, an extremely low-power biasing scheme driven by only positive bias voltage has been devised. The proposed antenna switch that employs the new biasing scheme shows almost the same power-handling capability and harmonic distortion as a conventional version based on a negative biasing scheme, while greatly reducing long start-up time and wasteful active current consumption in a stand-by mode of the conventional antenna switch driver circuits. The implemented single-pole four-throw antenna switch is perfectly capable of handling a high power signal up to 35 dBm with suitably low IL of less than 1 dB, and shows second-and third-order harmonic distortion of less than 45 dBm when a 1-GHz RF signal with a power of 35 dBm and a 2-GHz RF signal with a power of 33 dBm are applied. The proposed antenna switch consumes almost no static power.Index Terms-Antenna switch, cellular, negative voltage, powerhandling capability, power loss, silicon-on-insulator (SOI), stacked field-effect transistor (FET), switch driver, switch-FET device.

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Section: New Biasing Strategy Without Negative Bias Voltagementioning

confidence: 99%

A Stacked-FET Linear SOI CMOS Cellular Antenna Switch With an Extremely Low-Power Biasing Strategy

Kim

et al. 2015

IEEE Trans. Microwave Theory Techn.

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“…To ensure stringent linearity, especially in the presence of high power levels, the majority of antenna switches incorporate transmit filters. Various filter strategies, including Surface acoustic wave (SAW) [20,21,22] and bulk acoustic wave (BAW) [23,24,25] filters for receiver paths, as well as integrated passive device (IPD) [26,27,28] or glass laminate filters for transmit sides, have been developed to deliver excellent power and harmonic performance. However, these technologies often require extra chips to be integrated into the switch package.…”

Section: Introductionmentioning

confidence: 99%

Monolithic MIPI SOI CMOS single-pole fourteen-throw antenna switch module with on-chip transmit filters for cellular handsets

Wang,

Huang,

Zhou

et al. 2024

IEICE Electron. Express

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A monolithic single-pole, fourteen-throw (SP14T) antenna switch module (ASM) with on-chip transmit filters is implemented in a 180nm silicon-on-insulator CMOS process for multi-mode multi-band cellular handsets. To ensure compatibility with control interfaces and multi-band linear operation, a mobile industry processor interface decoder, a positive voltage regulator, a negative voltage generator, and an asymmetric RF-core topology are incorporated. Moreover, an optimal on-chip filter matching method is introduced to achieve a fully integrated solution that enhances both harmonic performance and miniaturization. The SP14T ASM exhibits excellent insertion loss, isolation, linearity, and harmonic performance across different modes.

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“…The FB switches are beneficial to lower insertion loss (IL) whereas the BC switches achieve lower harmonics [20,21]. To the contrary, the BC FET benefits the switch linearity due to the ability to prevent the junction diodes from forward biasing using negative body voltage bias [22,23,24], but the drawback with it is the increased loss [25,26,27].…”

Section: Introductionmentioning

confidence: 99%

A low-loss high-linearity SOI SP6T antenna switch using diode biasing method

Abdo

Ling

Chen

2019

IEICE Electron. Express

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This letter describes a single-pole six-throw (SP6T) antenna switch in a 180 nm silicon-on-insulator (SOI) CMOS technology for receive diversity and LTE transmit/receive applications. Using a new diode biasing method, the conventional biasing resistor and supply voltage are removed at the body of the stacked-FET switch, a diode is used to connect the body and gate for body bias instead. The biasing diode turns off and on and functions as a high and small resistor for the on and off state. The proposed design helps to achieve low loss and high linearity. The measured insertion loss (IL) at 0.9 and 1.9 GHz are roughly 0.29 and 0.46 dB, respectively. The switch shows a second harmonic of −86 and −83 dBc, and third harmonic power of −94 and −87 dBc with a +26 dBm input power at 0.9 and 1.9 GHz, respectively.

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A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

Cited by 5 publications

References 2 publications

A Stacked-FET Linear SOI CMOS Cellular Antenna Switch With an Extremely Low-Power Biasing Strategy

A Stacked-FET Linear SOI CMOS Cellular Antenna Switch With an Extremely Low-Power Biasing Strategy

Monolithic MIPI SOI CMOS single-pole fourteen-throw antenna switch module with on-chip transmit filters for cellular handsets

A low-loss high-linearity SOI SP6T antenna switch using diode biasing method

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