A light-shield a-Si TFT with low dark-leakage currents

The feasibility of using Cu/ CuMg as a source/drain metal for the island-in amorphous silicon thin film transistors ͑a-Si: H TFTs͒ has been investigated. The issue of adhesion between the Cu film and n +a-Si layer has been overcome by introducing the Cu/ CuMg alloy. Furthermore, the suppression of Schottky leakage current in metal/a-Si: H structure was also observed in the island-in a-Si: H TFT. The island-in a-Si: H TFT exhibited the mobility of 0.52 cm 2 / V s, the subthreshold slope of 0.78 V / decade, and the V th of 3.02 V. The experimental result also showed superior performance of the a-Si: H TFT with minimal loss of critical dimension and good thermal stability.

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Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu∕CuMg as source/drain metal

Wang

Chang

Liu

et al. 2007

Applied Physics Letters

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33.1: A 3.2-in. LCD Panel using Amorphous Silicon TFT Formed with Novel Selective and Dispersive Transfer Technique

Onozuka

Hara

Hioki

et al. 2005

SID Symposium Digest

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A light-shield a-Si TFT with low dark-leakage currents

Cited by 2 publications

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Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu∕CuMg as source/drain metal

Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu∕CuMg as source/drain metal

33.1: A 3.2-in. LCD Panel using Amorphous Silicon TFT Formed with Novel Selective and Dispersive Transfer Technique

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