Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu∕CuMg as source/drain metal

Wang, M. C.; Chang, T. C.; Liu, Po–Tsun; Xiao, Ruihua; Lin, Li-Yuan; Li, Y. Y.; Huang, Fon-Shan; Chen, J. R.

doi:10.1063/1.2767147

Cited by 9 publications

(3 citation statements)

References 8 publications

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“…The differences between the Cu layer and the contact layer make it complicated in the subsequent etching process [14]. In order to improve the reliability and cost of Cu gate electrodes, another method is advocated, namely, the use of Cu alloy (Cu-Mg [15,16], Cu-Ca [17][18][19], Cu-Mn [20][21][22][23], Cu-Ti [24]) instead of pure Cu to form a diffusion barrier and adhesion layer spontaneously [25].…”

Section: Introductionmentioning

confidence: 99%

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

Peng

et al. 2017

Applied Sciences

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Abstract:The characteristics of Cu alloy (0.3 wt. % Cr, 0.2 wt. % Zr) thin film deposited by direct current (DC) magnetron sputtering deposition were investigated. The conductivity and adhesion of the Cu-0.3%Cr-0.2%Zr films were optimized by increasing the sputter power to 150 W and reducing the sputter pressure to 2 mTorr. With an annealing process (at 300 • C for 1 h in argon ambient atmosphere), the resistivity of the alloy film decreased from 4.80 to 2.96 µΩ·cm, and the adhesion classification increased from 2B to 4B on glass substrate. X-ray photoelectron spectroscopy (XPS) analysis showed that Cr aggregated toward the surface of the film and formed a self-protection layer in the annealing process. Transmission electron microscopy (TEM) indicated the aggregation and migration of Cr in the annealing process. A further X-ray diffraction (XRD) analysis showed that Cu 2 O appeared when the annealing temperature reached above 350 • C, which accounts for the increase of the resistivity. Based on Al 2 O 3 and SiO 2 substrate surfaces, the Cu-0.3%Cr-0.2%Zr film also showed high conductivity and adhesion, which has a potential in the application of Cu gate electrodes for thin film transistor (TFT).

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Section: Introductionmentioning

confidence: 99%

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

Peng

et al. 2017

Applied Sciences

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“…Copper metallization has been receiving increasing attention in both microelectronics [8][9][10][11][12] and large-area electronics, because RC time delay can be reduced considerably by employing the low electrical resistivity metallurgy.…”

Section: Introductionmentioning

confidence: 99%

n+-Doped-layer free amorphous silicon thin film solar cells fabricated with the CuMg alloy as back contact metal

Wang

Chang

Tsao

et al. 2011

Solid-State Electronics

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“…Recently, as a reliable and cost-effective alternative to an extra layer of Mo or Ti, a technique for self-forming an adhesion-aid and diffusion barrier layer using Cu alloy (Cu-Mn, [3][4][5][6][7][8][9][10][11][12][13][14] Cu-Ca, 15,16) Cu-Mg, 17,18) Cu-Ti, 19) Cu-Zn 20) ) is attracting considerable attention. With this technique, Cu alloy is first deposited directly on oxygen-containing material such as silicon oxide or glass.…”

Section: Introductionmentioning

confidence: 99%

Study on Ozonated Solution Oxidation of Phosphorus Doped Hydrogenated Amorphous Silicon Surface for Cu–Mn Alloy Based Electrodes in Thin Film Transistor

Asanuma¹,

Suzuki²,

Kusunoki³

2012

Jpn. J. Appl. Phys.

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For next generation Cu-Mn alloy based interconnects in thin film transistor liquid crystal displays (TFT-LCDs), we propose the use of an ozonated solution as a promising oxidation pretreatment of phosphorus doped hydrogenated amorphous silicon (n þ a-Si:H) surface for the self-formation of Mn complex oxide layers. We have investigated the electrical characteristics of TFTs having Cu/Cu-Mn alloy bilayer electrodes with/without ozonated solution oxidation and those having conventional Cr-Mo single layer electrodes. TFTs having Cu/Cu-Mn alloy electrodes oxidized with ozonated solution exhibit very similar transfer characteristics to those of TFTs with conventional material electrodes; however, they also show increases in threshold voltage (V th ) and subthreshold swing (SS) as well as slightly reduced electron mobility and on-current. We have concluded that partial and shallow Cu-diffusion into a n þ a-Si:H layer is the most likely reason for the degraded TFT electrical properties.

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Suppression of Schottky leakage current in island-in amorphous silicon thin film transistors with the Cu∕CuMg as source/drain metal

Cited by 9 publications

References 8 publications

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

High Conductivity and Adhesion of Cu-Cr-Zr Alloy for TFT Gate Electrode

n+-Doped-layer free amorphous silicon thin film solar cells fabricated with the CuMg alloy as back contact metal

Study on Ozonated Solution Oxidation of Phosphorus Doped Hydrogenated Amorphous Silicon Surface for Cu–Mn Alloy Based Electrodes in Thin Film Transistor

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