A laterally excited bulk acoustic resonator with scattering vias in electrodes

Abstract

Laterally excited bulk acoustic resonators (XBARs) using interdigital electrodes are currently limited in potential 5G applications due to the accompanied spurious modes and small capacitance. This Letter presents an XBAR with scattering vias in electrodes, named SV-BAR. The non-parallel boundaries thoroughly disrupt the coherent formation of standing waves in the lateral direction, thereby suppressing the higher-order spurious modes. The duty factor of SV-BAR is optimized as 0.5 using COMSOL Multiphysics finite element analysis for the 50 Ω impedance matching. The SV-BAR is fabricated using a 390 nm Z-cut LiNbO3 on an insulator substrate and exhibits an impressive ratio of Zp/Zs near 64.5 dB, a Kt2 of 21.80% at 4.762 GHz, as well as a large value f · Bode_Qmax · Kt2 (3.43 × 1011). The measured temperature coefficient of frequency is −69.8 ppm/°C, which can be compensated using SiO2 thin films. The SV-BAR provides an effective solution for high-performance radio frequency filters for 5G communication.

Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators with Support Structures

“…Remarkably, seminal work by Yang et al has demonstrated A1 mode resonators operating within the 5 GHz range, showcasing a K 2 e f f value of 29% [15], thereby highlighting their considerable potential in the sub-6 GHz domain. Nevertheless, a substantial challenge associated with A1 mode resonators is their vulnerability to spurious modes [16][17][18][19], which constitute a critical barrier to their extensive application. Consequently, the strategic goal of minimizing or eradicating these spurious modes becomes an essential consideration for the advancement of high-performance A1 mode resonators.…”