A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Xu, Ru; Chen, Peng; Liu, Xiancheng; Zhao, Jianguo; Zhu, Tinggang; Chen, Dunjun; Xie, Zili; Ye, Jiandong; Xiu, Xiangqian; Wan, Fayu; Chang, Jianhua; Zhang, Rong; Zheng, Youdou

doi:10.1016/j.chip.2023.100079

Cited by 2 publications

(1 citation statement)

References 29 publications

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“…The following optimization methods can be used to optimize the device structure: 1. The selection of a suitable metal is crucial to increase the height of the resulting metal/p-GaN Schottky barrier [ 41 , 42 , 43 ]. Figure 15 shows a Schottky barrier diode (SBD) structure with a double-barrier design that was proposed to achieve a low conduction AlGaN/GaN SBD and an ultra-high breakdown voltage.…”

Section: Conclusion and Future Perspectivesmentioning

confidence: 99%

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Dai,

Wang,

2024

Micromachines

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With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field. It has been found that GaN HEMT devices have a drift in threshold voltage under the conditions of temperature and gate stress changes. Under high-temperature conditions, the difference in gate contact also causes the threshold voltage to shift. The variation in the threshold voltage affects the stability of the device as well as the overall circuit performance. Therefore, in this paper, a review of previous work is presented. Temperature variation, gate stress variation, and gate contact variation are investigated to analyze the physical mechanisms that generate the threshold voltage (VTH) drift phenomenon in GaN HEMT devices. Finally, improvement methods suitable for GaN HEMT devices under high-temperature and high-voltage conditions are summarized.

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Section: Conclusion and Future Perspectivesmentioning

confidence: 99%

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Dai,

Wang,

2024

Micromachines

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One-Selector-One-Resistor Integrated Memory Cells Based on Two-Dimensional Heterojunction Memory Selectors

Shen,

Jia

et al. 2024

ACS Nano

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Selectors are critical components for reducing the sneak path leakage currents in emerging resistive random-access memory (RRAM) arrays. Two-dimensional (2D) materials provide a rich choice of materials with van der Waals stacking to form the heterostructure selectors with controllable energy barriers. Here, we experimentally demonstrate 2D-material-based heterostructure selectors with exponential current−voltage (I−V) relationships and integrate them with hafnium oxide (HfO x )-based RRAMs, forming one-selector-one-resistor (1S1R) cells. The multilayer graphene (MG)/tungsten disulfide (WS 2 )/platinum (Pt) selector contains two asymmetric heterojunctions with different Schottky barriers, which lead to highly nonlinear and asymmetric I−V characteristics. The 2D selectors in 1S1R cells can successfully drive RRAMs, reduce sneak path leakage current by more than 100 times, and provide the set compliance current. The 1S1R cells are further modeled and integrated into both planar and 3D memory arrays, with circuit-level simulations demonstrating that the presence of 2D selectors in large memory arrays can reduce the power consumption by up to 86%, improve the read/write margin by up to 31%, and avoid write failure. Such a platform holds high potential for constructing 3D high-density memories and performing in-memory computing.

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A lateral AlGaN/GaN Schottky barrier diode with 0.36-V turn-on voltage and 10-kV breakdown voltage by using double-barrier anode structure

Cited by 2 publications

References 29 publications

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

One-Selector-One-Resistor Integrated Memory Cells Based on Two-Dimensional Heterojunction Memory Selectors

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