One-Selector-One-Resistor Integrated Memory Cells Based on Two-Dimensional Heterojunction Memory Selectors

Abstract

Selectors are critical components for reducing the sneak path leakage currents in emerging resistive random-access memory (RRAM) arrays. Two-dimensional (2D) materials provide a rich choice of materials with van der Waals stacking to form the heterostructure selectors with controllable energy barriers. Here, we experimentally demonstrate 2D-material-based heterostructure selectors with exponential current−voltage (I−V) relationships and integrate them with hafnium oxide (HfO x )-based RRAMs, forming one-selector-one-resistor (1S1R) cells. The multilayer graphene (MG)/tungsten disulfide (WS 2 )/platinum (Pt) selector contains two asymmetric heterojunctions with different Schottky barriers, which lead to highly nonlinear and asymmetric I−V characteristics. The 2D selectors in 1S1R cells can successfully drive RRAMs, reduce sneak path leakage current by more than 100 times, and provide the set compliance current. The 1S1R cells are further modeled and integrated into both planar and 3D memory arrays, with circuit-level simulations demonstrating that the presence of 2D selectors in large memory arrays can reduce the power consumption by up to 86%, improve the read/write margin by up to 31%, and avoid write failure. Such a platform holds high potential for constructing 3D high-density memories and performing in-memory computing.