A Laser-Trimming-Assist Wavelength-Alignment Technique for Silicon Microdonut Resonators

Guo, Tingbiao; Zhang, Ming; Yin, Yanlong; Dai, Daoxin

doi:10.1109/lpt.2016.2639785

Cited by 17 publications

(11 citation statements)

References 14 publications

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“…Current and next generation computing architectures all employ low-latency optical links that come in the form of parallel optical modules, active optical cables or QSFP (Quad Small Form-factor Pluggable) transceivers and it is believed that optical interconnects are still one of the key technologies that can continue to address the bandwidth, energy, and cost challenge required in the future. Based on these challenges, the 3 main desired requirements for the (de-)multiplexing filters within an optical interconnect module should be: 1) lowering the optical losses such that there is minimal impact on the optical power budget, 2) the pass-band wavelengths are tolerant enough to accommodate high temperature operation (80°C) such that electrical thermal tuning is not required, 3) the material platform is robust enough to yield devices with repeatable performance such that post fabrication trimming is avoided [6]- [8]. Optical (de-)multiplexers can be implemented in a variety of ways such as AWGs [9]- [14], echelle diffraction gratings [15], [16], cascaded MZI lattice filters [17]- [19] and contra-directional couplers [20].…”

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confidence: 99%

Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Cheung

Tan

2020

J. Lightwave Technol.

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We discuss the design and demonstration of 4-channel coarse wavelength-division (de-)multiplexers based on cascaded Mach-Zehnder interferometer (MZI) lattice filters and arrayed waveguide gratings (AWG) on a 150 nm silicon nitride (Si 3 N 4) platform. The 1 × 4 (de-)multiplexers are designed for a channel separation of 25 nm and operate within 990-1065 nm for bottom emitting vertical cavity surface emitting lasers (VCSEL)-based optical links. For Si 3 N 4 Gaussian AWGs, we demonstrate crosstalk <−35 dB at the peak transmission band with insertion loss <0.5 dB. Measurements were performed over many dies, and passband standard deviations for channel 1-4 are 0.49, 0.66, 0.42, and 0.37 nm, respectively. Results for flat-top AWGs indicate crosstalk <−20 dB, with insertion loss <3 dB for the best devices. Flattop cascaded 2 nd order and 3 rd order MZI lattice filters show a minimum of crosstalk <−15 dB and <−20 dB, respectively. The pass-band temperature shift was determined to be 14.5 pm/°C, which is lower than reported values for silicon. The device footprint of the Gaussian and flat-top AWGs are both ∼670 × 200 µm. The device footprint of the flat-top cascaded 2 nd order and 3 rd order lattice filters are 1160 × 470 µm and 1570 × 470 µm, respectively. We believe the Si 3 N 4 platform has potential for its use in CWDM and possibly DWDM transceiver/optical-modules for data/computer communication in high temperature environments up to 80°C. Index Terms-Optical interconnects, photonic integrated circuits, silicon nitride, silicon photonics. I. INTRODUCTION T HERE continues to be an increased demand for high bandwidth density optical interconnects for future mega data centers, long-haul communications, and peta/exa-scale high performance computing (HPC). One study suggests annual global data center IP traffic will reach 20.6 Zettabytes (ZB) by the end of 2021; 94% of those workloads will be processed by cloud data centers and 6% by traditional data centers [1]. In another study, it is estimated by 2020, HPC peak performance will exceed 1 exaflop and require 800 million optical channels with each channel operating at ∼25 Gb/s, 1mW/Gb/s, and at $25/Tb/s [2]. Recently, Hewlett Packard Enterprise announced a new memory centric architecture where CPUs and a universal pool of memory (DRAM, SSD, NVRAM, etc.) are interconnected through a high

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confidence: 99%

Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Cheung

Tan

2020

J. Lightwave Technol.

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“…However, the layout design becomes increasingly complex and power consumption can be prohibitive for hundreds of devices integrated on the same wafer. As an alternative approach, postfabrication trimming methods have been investigated to permanently modify the refractive index of either the waveguide core or the cladding material through various laser-assisted processes, including oxidation, [144] dehydrogenization, [145] and annealing. [140] One of the postfabrication trimming methods attracting considerable attention over the past decade is laser annealing of ionimplanted silicon photonic devices, such as MRRs [146] and MZIs.…”

Section: Postfabrication Laser Trimming Of Integrated Photonic Circuitsmentioning

confidence: 99%

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Aktaş

Peacock

2021

Advanced Photonics Research

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In the quest to expand the functionality and capacity of group IV semiconductor photonic systems, new materials and production methods are constantly being explored. In particular, flexible fabrication and postprocessing approaches that are compatible with different materials and allow for tuning of the components and systems are of great interest. Within this research area, laser thermal processing has emerged as an indispensable tool that can be applied to enhance and/or modify the material, structural, electrical and optical properties of group IV elemental and compound semiconductors at various stages of the production process. Herein, the recent progress made in the application of laser processing techniques to develop integrated semiconductor systems in both fiber‐ and planar‐based platforms is evaluated. Laser processing has allowed for the production of semiconductor waveguides with high crystallinity in the core and low optical losses, as well as postfabrication trimming of device characteristics and direct writing of tunable strain and composition profiles for bandgap engineering and optical waveguiding. For each platform, the current challenges and opportunities for the future development of laser‐processed integrated semiconductor photonic systems are presented.

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“…While real-time tuning may still be required to account for any resonance drifts due to ambient temperature changes, post-fabrication trimming largely eliminates the power needed to correct for initial fabrication variations. Previous methods to implement changes to the refractive index include exposing fabricated devices to highpower laser beams [11][12][13][14][15][16][17][18][19], electron beams [6,20,21], or visible/UV light [14,22]. These methods are difficult to implement at wafer-scale with high throughput and at low cost.…”

Section: Introductionmentioning

confidence: 99%

Post-Fabrication Trimming of Silicon Photonic Ring Resonators at Wafer-Scale

Jayatilleka

Frish²,

Kumar³

et al. 2021

J. Lightwave Technol.

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Silicon ring resonator-based devices, such as modulators, detectors, filters, and switches, play important roles in integrated photonic circuits for optical communication, highperformance computing, and sensing applications. However, the high sensitivity to fabrication variations has limited their volume manufacturability and commercial adoption. Here, we report a low-cost post-fabrication trimming method to tune the resonance wavelength of a silicon ring resonator and correct for fabrication variations at wafer-scale. We use a Ge implant to create an index trimmable section in the ring resonator and an on-chip heater to apply a precise and localized thermal annealing to tune and set its resonance to a desired wavelength. We demonstrate resonance wavelength trimming of ring resonators fabricated across a 300 mm silicon-on-insulator (SOI) wafer to within +/-32 pm of a target wavelength of 1310 nm, providing a viable path to high-volume manufacturing and opening up new practical applications for these devices.

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A Laser-Trimming-Assist Wavelength-Alignment Technique for Silicon Microdonut Resonators

Cited by 17 publications

References 14 publications

Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Post-Fabrication Trimming of Silicon Photonic Ring Resonators at Wafer-Scale

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A Laser-Trimming-Assist Wavelength-Alignment Technique for Silicon Microdonut Resonators

Cited by 17 publications

References 14 publications

Silicon Nitride (Si3N4) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Silicon Nitride (Si3N4) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Laser Thermal Processing of Group IV Semiconductors for Integrated Photonic Systems

Post-Fabrication Trimming of Silicon Photonic Ring Resonators at Wafer-Scale

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Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects

Silicon Nitride (Si₃N₄) (De-)Multiplexers for 1-μm CWDM Optical Interconnects