A Ku band 4-Element phased array transceiver in 180 nm CMOS

Zhang, Xiaoning; Chen, Dong; Lu, Weiqang; Zhang, Lin; Wu, Yipeng; Xu, Qinghe; Chen, Zhilin; Sun, Shengjie; Liu, Xiaoyang; Liu, Huihua; Wu, Yunqiu; Zhao, Chenxi; Kang, Kai

doi:10.1109/mwsym.2017.8058938

Cited by 21 publications

(11 citation statements)

References 5 publications

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“…As of the simple integration, the chip has been integrated into a 4-element Ku-band-phased array transceiver [30]. A single-channel fully integrated transceiver consisting of a low-loss switch at the common port and a high isolation switch at the antenna port is fabricated using standard 180-nm triple-well CMOS technology, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Differential low‐loss T/R switch for phase array application in 0.18‐μm CMOS technology

Zhao

Liu

et al. 2019

IET Microwaves, Antennas & Propagation

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Here, a Ku‐band transmit/receive (T/R) differential switch using the 180‐nm CMOS process is presented. The differential structure method is chosen to realise easy integration with other RF components. From 15–18 GHz, the measured insertion loss (IL) of the switch in the transmit (TX) and receive (RX) mode is 4.3 and 4.1 dB, respectively. The isolation is better than 20 dB in both modes. The design achieves a measured input 1 dB power compression point (InormalP1dB) of 13.5 dBm at 17 GHz. The differential T/R switch integrated in a Ku‐band‐phased array transceiver demonstrates that it is a promising technology for implementing fully integrated transceiver.

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Section: Resultsmentioning

confidence: 99%

Differential low‐loss T/R switch for phase array application in 0.18‐μm CMOS technology

Zhao

Liu

et al. 2019

IET Microwaves, Antennas & Propagation

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“…For millimeter-wave phased array systems, wide operating bandwidth is more and more important to serve multiband operations and multiapplication integrations. [1][2][3] Among all the building blocks in the wideband millimeter-wave transceivers, the transmit/receive (T/R) single pole double throw (SPDT) switch is an indispensable component that enables the transmitter (TX) and the receiver (RX) to share an antenna to reduce system cost, [4][5][6] as depicted in Figure 1. SPDT switches are usually integrated into power amplifier (PA) and low-noise amplifier (LNA) modules, and it includes coupler to support envelope tracking (ET) for PA and antenna tuner to enlarge frequency covering range.…”

Section: Introductionmentioning

confidence: 99%

Design of high‐isolation and low‐loss single pole double throw switch based on the triple‐coupled transformer for ultra‐wideband phased array systems

Wang

Wang³

et al. 2021

Circuit Theory & Apps

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This paper proposes a single pole double throw (SPDT) switch based on the triple-coupled transformer. The triple-coupled transformer utilizes a novel structure with three stacked coupled inductors which are placed in nonconcentric positions to ensure the isolation of SPDT switch. The SPDT switch obtains additional optimization space to improve insertion loss performance under the premise of reassuring isolation. The equivalent circuit model is built to interpret the mechanism of the SPDT switch and transformer. The proposed switch is implemented with the 65-nm CMOS process, the simulated results show the isolation between input-to-output ports are better than 25 dB at 24-38 GHz. The proposed SPDT switch achieves a minimum insertion loss of 1.56 dB with compact chip size 625 Â 370 μm 2 (with PADs).

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“…8 In order to eliminate the influence of package, reject the common-mode noise and enhance the output power, the differential topology is attractive for CMOS process circuit. [1][2][3][4][5][6][7][8] Conventionally, balun is adopted in the differential system. Meanwhile, the balance and matching property of balun are crucial in the circuit performance.…”

Section: Introductionmentioning

confidence: 99%

“…The complementary metal oxide semiconductor (CMOS) process has been gaining increasing attention for millimeter wave and THz applications in the 5th generation (5G) communication, the phase array transceiver, and the THz imaging system . In order to eliminate the influence of package, reject the common‐mode noise and enhance the output power, the differential topology is attractive for CMOS process circuit . Conventionally, balun is adopted in the differential system.…”

Section: Introductionmentioning

confidence: 99%

Millimeter wave balun design and optimization based on compensation matching capacitors and active S parameter

Zhang

et al. 2019

Int J Numerical Modelling

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A balun design algorithm based on the compensation matching capacitors and the active S parameter is given in this paper. Compared with the inductor matching network, the compensation matching capacitors not only compensate the phase and the amplitude error of the balun, but also occupy a compact chip area. Considering the coupling between two differential terminals of the balun, the active S parameter is adopted. On the basis of the active S parameter, the reflection coefficients of two differential terminals are calculated directly. On the basis of this algorithm, the simulated phase error and the amplitude error of the balun are less than 0.97°and 0.13 dB, from 15 to 18 GHz. Moreover, a 5-bit differential switch-type phase shifter with two baluns is designed in the 180-nm complementary metal oxide semiconductor (CMOS) process at Ku band. Thanks to the small phase error of two baluns, the tested RMS phase error is less than 4°, from 15 to 18 GHz.

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A Ku band 4-Element phased array transceiver in 180 nm CMOS

Cited by 21 publications

References 5 publications

Differential low‐loss T/R switch for phase array application in 0.18‐μm CMOS technology

Differential low‐loss T/R switch for phase array application in 0.18‐μm CMOS technology

Design of high‐isolation and low‐loss single pole double throw switch based on the triple‐coupled transformer for ultra‐wideband phased array systems

Millimeter wave balun design and optimization based on compensation matching capacitors and active S parameter

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