Millimeter wave balun design and optimization based on compensation matching capacitors and active S parameter

Zhang, Xiaoning; Wu, Tianjun; Hu, Yuwen; Wu, Yunqiu; Zhao, Chenxi; Liu, Huihua; Yu, Yiming

doi:10.1002/jnm.2644

Cited by 2 publications

(2 citation statements)

References 12 publications

(24 reference statements)

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“…All RF components are designed in differential structures for robust RF performance, except the power combiner and switches. The input and output baluns are realized by octangular fashions for high quality factor [ 26, 27 ] . All the states of the phase shifter and attenuator are set by an on‐chip standard serial peripheral interface (SPI) controller.…”

Section: System Analysismentioning

confidence: 99%

A CMOS 4‐Element Ku‐Band Phased‐Array Transceiver

ZHANG

Zhao

et al. 2022

Chinese J of Electronics

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This paper presents a Ku‐Band fully differential 4‐element phased‐array transceiver using a standard 180‐nm CMOS process. Each transceiver is integrated with a 5‐bit phase shifter and 4‐bit attenuator for high‐resolution radiation manipulation. The front‐end system adopts time‐division mode, and hence two low‐loss T/R switches are included in each channel. At room temperature, the measured root‐mean‐square (RMS) phase error is less than 5.5°. Furthermore, the temperature influence on passive switched phase shifters is analyzed. Meanwhile, an extra phase‐shifting cell is developed to calibrate phase error varying with the operating temperatures. With the calibration, the RMS phase error is reduced by 7° at −45 ℃, and 5.4° at 85 ℃. The RMS amplitude error is less than 0.92 dB at 15−18 GHz. In the RX mode, the tested gain is 9.6±1.1 dB at 16.5 GHz with a noise figure of 10.9 dB, and the input P1dB is −15 dBm, while the single‐channel's gain and output P1dB in the TX mode are 11.3±0.4 dB and 9.4 dBm at 16.1 GHz, respectively. The whole chip occupies an area of 5×4.2 mm2 and the measured isolation between each two adjacent channels is lower than −23.1 dB.

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Section: System Analysismentioning

confidence: 99%

A CMOS 4‐Element Ku‐Band Phased‐Array Transceiver

ZHANG

Zhao

et al. 2022

Chinese J of Electronics

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“…Zhang et al presented an improved wideband single‐π model for on‐chip spiral inductors based on independent test ground PADs. A different group by Zhang et al reported a balun design algorithm based on compensation matching capacitors and their active S parameters. Using CMOS technology, Chen et al designed a millimeter‐wave up‐conversion mixer by using a two‐path transconductance stage and Yu et al reported a linear V‐band low‐noise amplifier by employing a Gm‐boosting technique using full‐wave high‐frequency structure simulator.…”

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confidence: 99%

Guest Editorial for the special issue on devices and circuits for millimeter‐wave and THz applications

2020

Int J Numerical Modelling

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Wireless communication, precision guidance, imaging, internet of things, and biomedical applications in the millimeter-wave and THz bands promise new functionalities that cannot be provided by present systems. Different from present design methods, new design methods are required to support the development of high-performance millimeterwave and THz band devices and systems. These new design methods should incorporate new materials, advanced processing and technologies, and can accurately account for multi-physics coupling effects. This special issue collects 32 papers including 20 papers on active device modeling, nine papers on passive device and circuit modeling and design techniques, and three papers on emerging system applications.Active devices for state-of-the-art millimeter-wave and THz systems discussed in this special issue include Indium phosphide (InP) heterojunction bipolar transistors (HBTs), Indium Gallium Phosphide (InGaP)/Gallium arsenide (GaAs) HBTs, Gallium nitride (GaN) high electron mobility transistors (HEMTs), GaAs HEMTs, complementary metal oxide silicon (CMOS) transistors, and electric vacuum devices. The discussion covers the important device features of high frequency, high power, low noise, and high efficiency. As the frequency goes up to the millimeter-wave and THz bands, advanced physical-based or SPICE-like equivalent circuit and compact models are needed. As a solid-state device, InP transistor can operate at a very high frequency by taking advantages of extremely high electron mobility. Zhang et al 1 presented a review on the compact modeling of InP HBTs for THz integrated circuits. Useful improvements made for HBTs are reported on the analysis of intrinsic base resistances by Chen et al, 2 on large-signal models by Hu et al, 3 on the determination of cutoff and maximum oscillation frequencies by Zhang and Gao, 4 and on the thermal resistance calculation by Wang et al. 5 Due to a high breakthrough voltage and saturation velocity, GaN HEMTs is very promising for millimeter-wave solid-state power amplifiers. Chen et al 6 reported an improved quasi-physics zone division large-signal model to account for electro-thermal effects, which is valid for the ambient temperature range of 245 to 390 K. Physical parameters' effects, reliable parameter extraction, and dynamic thermal impedance extraction for the equivalent circuit models of GaN HEMTs are discussed by Mi et al, 7 Chen et al, 8 and Wang et al, 9 respectively. The modeling of emerging devices is also presented by Chen et al 10 for GaN-on-diamond HEMTs and Zhang et al 11 for AlGaN/GaN fin-shaped HEMTs, which may be interesting for next generation devices. Accurate modeling of transistors' noise performance is important for low-noise applications. Jarndal et al 12 developed a noise model for GaN HEMTs and Caddemi et al 13 reported an improved scalable parameter extraction method for GaAs HEMTs. CMOS transistor is very competitive in millimeter-wave and THz circuits due to its mature process. Bashir et al 14 presented a scalable small-...

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Millimeter wave balun design and optimization based on compensation matching capacitors and active S parameter

Cited by 2 publications

References 12 publications

A CMOS 4‐Element Ku‐Band Phased‐Array Transceiver

A CMOS 4‐Element Ku‐Band Phased‐Array Transceiver

Guest Editorial for the special issue on devices and circuits for millimeter‐wave and THz applications

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