Differential low‐loss T/R switch for phase array application in 0.18‐μm CMOS technology

Abstract

Here, a Ku‐band transmit/receive (T/R) differential switch using the 180‐nm CMOS process is presented. The differential structure method is chosen to realise easy integration with other RF components. From 15–18 GHz, the measured insertion loss (IL) of the switch in the transmit (TX) and receive (RX) mode is 4.3 and 4.1 dB, respectively. The isolation is better than 20 dB in both modes. The design achieves a measured input 1 dB power compression point (InormalP1dB) of 13.5 dBm at 17 GHz. The differential T/R switch integrated in a Ku‐band‐phased array transceiver demonstrates that it is a promising technology for implementing fully integrated transceiver.

Common mode disturbance tolerant broadband differential SPDT switch for Ka-band radar

“…But these circuits [20,21] suffer from poor common mode rejection due to single ended architecture, poor-isolation, higher insertion-loss and require additional bias voltage for source and drain biasing. In [22], transformer type differential inductor is used for differential SPDT switch design. However, due to the use of transformer type inductor, coupling is limited and hence has poor isolation, limited 3 GHz IEICE Electronics Express, Vol.VV, No.NN, 1-6 Fig.…”