A Ka-band grid amplifier module with over 10 Watts output power

Abstract

Abslracf -We present a Ka-band Grid Amplifier power module. The module is fully packaged with wavegnide input and output flanges. It includes a driver Grid Ampllder chip for gain, followed by a booster Grid Amplifier chip for power. With n 50°C baseplate temperature, the module has a smallsignal gain of 12dB. The single-chip output booster stage delivers over 16 Watts of saturated power. The module dellven over 10 Watts output with a constant 1.6 Warts input over a 550-MBz bandwidth. We also present large4signal third-order intermodulation and A M M conversion measurements, which are consistent with expectations. To our knowledge, this is the highest power ever reported from a monolithic singlechip power ampliner at ffi-band.Index Terms -Power combiners, millimeter wave power amplifiers.

W-band waveguide-packaged InP HEMT reflection grid amplifier

“…The former has separate input and output signal transmission planes, while those signals coexist in the same plane in the latter [3]. DeLisio et al demonstrated a 31-GHz two-stage transmission grid amplifier module and over 10 W output power and 12-dB gain [4]. Cheung et al presented 82-GHz reflection grid amplifier with 5.5-dB gain, 400-MHz 3-dB bandwidth, and 110-mW saturated output power [5].…”