Microwave and millimeter wave solid state power amplifiers for future space-based communications and radars

Investigation of N2 plasma GaAs surface passivation efficiency against air exposure: Towards an enhanced diode

“…It is extensively used for electronic and optoelectronic devices, as well as high-frequency radar systems [1][2][3]. As a substrate, it is a good candidate for monolithic microwave integrated circuits (MMICs) [4,5]. However, GaAs performance suffers from fast surface oxidation.…”

Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

“…GaAs also exhibits light emitting [ 5 ], electromagnetic [ 6 ], and photovoltaic [ 7 ] properties. It can be utilized in high-speed semiconductor devices [ 8 ], high-power microwave and millimeter-wave devices [ 9 ], optoelectronic devices [ 5 , 10 , 11 , 12 ], medical detectors [ 13 ], and imaging devices [ 13 , 14 , 15 , 16 ]. Moreover, its bandgap energy can be tuned to the range appropriate for several applications, such as long wavelength emitters [ 17 ], detectors [ 18 ], and spintronic-related devices [ 17 ], by alloying it with other elements such as In, Al, Sb, and N to form InGaAs, AlGaAs, GaAsSb, and GaAsN, respectively, etc.…”