W-band waveguide-packaged InP HEMT reflection grid amplifier

This paper presents the first millimeter-wave wafer-scale power-amplifier array implemented in a 0.13-m BiCMOS technology. The power combining is done in the free-space using high efficiency on-chip antennas. A 3 3 power-amplifier array is demonstrated with an equivalent isotropic radiated power of 33-35 dBm at 90-98 GHz. This results in a total on-chip power of 21-23 dBm and a total radiated power of 17.5-19.5 dBm. The measured patterns of the array show single-mode operation and 100% free-space power-combining efficiency with a 3-dB beamwidth of 28 and a directivity of 15.5 dB (gain of 12 dB). The total power-combining efficiency including the antenna losses is 45 10%. The application areas are in millimeter-wave transmitters and wafer-scale phased arrays.Index Terms-Equivalent isotropic radiated power (EIRP), phased arrays, power amplifiers, quasi-optical combining, SiGe BiCMOS.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

W-band waveguide-packaged InP HEMT reflection grid amplifier

Cited by 3 publications

References 4 publications

InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review

InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review

A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications

Millimeter-Wave Wafer-Scale Silicon BiCMOS Power Amplifiers Using Free-Space Power Combining

Contact Info

Product

Resources

About