A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications

Ajayan, J.; Nirmal, D.; Mathew, Ribu; Kurian, Dheena; Mohankumar, P.; Arivazhagan, L.; Ajitha, D.

doi:10.1016/j.mssp.2021.105753

Cited by 37 publications

(16 citation statements)

References 91 publications

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“…Al, Aluminium; Nb, Niobium; NbN, Niobium Nitride; NbTiN, Niobium Titanium Nitride; Ti, Titanium; TiN, Titanium Nitride. 3 The 10 GHz curve is exactly the same curve as shown in Figure 7 Therefore, we identify that for our design, we shall focus on the use of 100nm TiN film with V gap = 1.33mV (T c = 4.39 K) as it has similar R s and L s values as most of the successful examples shown in Figure 3. For the following analyses, we further include another option with half the TiN film thickness to show the impact of higher R s and L s on the performance of the KITWPA.…”

Section: Engineered Tin Thin Filmsmentioning

confidence: 98%

“…Figure 8 plots the same R s -L s relation for all films with different thickness at different operating frequencies, again showing the same quadratic relation between the two parameters regardless of the film thickness and operating frequency as well. Here, we exclude the engineered TiN films as it makes the plot too crowded to view, but all the points would lie exactly on the 10 GHz curve 3 . Obviously for KITWPA the favourable scenario is high L s with low R s as previously stated.…”

Section: Engineered Tin Thin Filmsmentioning

confidence: 99%

“…Traditionally, the amplification is achieved using High Electron Mobility Transistor (HEMT) amplifiers or low-noise Josephson Parametric Amplifiers (JPAs). Although the semiconductor-based HEMT amplifiers can achieve broadband amplification [1][2][3] , their noise performance is still far from approaching the quantum limit, and their heat dissipation is high, therefore limiting their deployment for large pixel count experiments due to the limited cryogenic cooling power capability. Whilst JPAs can achieve quantum noise performance, their operational bandwidth is relatively narrow at only a few percentage fractional bandwidth [4][5][6] .…”

Section: Introductionmentioning

confidence: 99%

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Engineering the thin film characteristics for optimal performance of superconducting kinetic inductance amplifiers using a rigorous modelling technique

Tan¹,

Boussaha²,

Chaumont³

et al. 2022

Open Res Europe

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Background: Kinetic Inductance Travelling Wave Parametric Amplifiers (KITWPAs) are a new variant of superconducting amplifier that can potentially achieve high gain with quantum-limited noise performance over broad bandwidth, which is important for many ultra-sensitive experiments. In this paper, we present a novel modelling technique that can better capture the electromagnetic behaviour of a KITWPA without the translation symmetry assumption, allowing us to flexibly explore the use of more complex transmission line structures and better predict their performance. Methods: In order to design a KITWPA with optimal performance, we investigate the use of different superconducting thin film materials, and compare their pros and cons in forming a high-gain low-loss medium feasible for amplification. We establish that if the film thickness can be controlled precisely, the material used has less impact on the performance of the device, as long as it is topologically defect-free and operating within its superconducting regime. With this insight, we propose the use of Titanium Nitride (TiN) film for our KITWPA as its critical temperature can be easily altered to suit our applications. We further investigate the topological effect of different commonly used superconducting transmission line structures with the TiN film, including the effect of various non-conducting materials required to form the amplifier. Results: Both of these comprehensive studies led us to two configurations of the KITWPA: 1) A low-loss 100 nm thick TiN coplanar waveguide amplifier, and 2) A compact 50 nm TiN inverted microstrip amplifier. We utilise the novel modelling technique described in the first part of the paper to explore and investigate the optimal design and operational setup required to achieve high gain with the broadest bandwidth for both KITWPAs, including the effect of loss. Conclusions: Finally, we conclude the paper with the actual layout and the predicted gain-bandwidth product of our KITWPAs.

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Section: Engineered Tin Thin Filmsmentioning

confidence: 98%

Section: Engineered Tin Thin Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Engineering the thin film characteristics for optimal performance of superconducting kinetic inductance amplifiers using a rigorous modelling technique

Tan¹,

Boussaha²,

Chaumont³

et al. 2022

Open Res Europe

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“…InP HEMT devices are frequently employed in microwave monolithic integrated circuits(MMICs) design because of their low noise, interference immunity and high gain performance [1,2,3,4,5,6,7]. Hence, an accurate InP HEMT small signal model is in high demand [8,9,11,12].…”

Section: Introductionmentioning

confidence: 99%

A distributed small signal model extraction method based on FW-EM simulation for InP HEMT

Ding

Wei

Wang

et al. 2023

IEICE Electron. Express

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In this paper, a method for 0.1 𝜇m InP HEMT parameters extraction using Full-wave Electromagnetic(FW-EM) simulation is proposed. The parasitic capacitances are divided into pad and electrode capacitances to describe the distributed effects. Based on the extrinsic equivalent circuit, five standards are proposed to determine the parasitic capacitances and inductances using FW-EM simulation. Additionally, as ohmic contact resistance cannot be acquired using FW-EM simulation, parasitic resistances are determined using a Cold-Fet method without forward gate bias. Multi-bias extraction for various device sizes has been used to validate the accuracy and robustness of the suggested extraction approach, and the results indicate good agreement from 0.1 to 40 GHz.

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“…O cially, since 2019, the terahertz (THz) band (> 100 GHz) has been considered the next frontier of wireless communications for Beyond-5G (B5G) and 6G networks, more speci cally, for the frequency range between 95 GHz and 3 THz [1]. Although this o cial status was only granted recently, researchers have been actively exploring this range of electromagnetic frequencies for decades [2,3], and in the process, have realized considerable progress in generating [4][5][6][7][8] and detecting [9][10][11][12] these waves to satisfy various application areas, including ultrafast spectroscopy [5,13,14], biomedicine [15,16] and security [17,18]. More recently, THz communications have received a lot of attention [19][20][21],…”

Section: Introductionmentioning

confidence: 99%

Parallel generation and coding of a terahertz pulse train

Nkeck

Béliveau

Ropagnol

et al. 2022

Preprint

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Packet-modulated communication may play a pivotal role in the future of short-range communications at terahertz (THz) frequencies. As with ultra-wideband communication, the advantageous of this type of communication are its extremely short duration, immunity to multipath fading, wide bandwidth and low power spectral density. However, due to the lack of a fast modulation method, packet-modulated pulse communication at THz frequencies has not yet been demonstrated. Here we present a method for the generation and modulation of a coded THz pulse train. Our scheme is based on the combination of a spintronic THz emitter (STE) with an echelon mirror and a digital micromirror device. This highly scalable configuration is capable of modulating hundred or more THz pulses in parallel with sub-picosecond accuracy and is versatile for various modulation protocols. Strikingly, the temporal resolution of our modulation scheme depends on geometric optics and not on a high-speed electronic device. Furthermore, the ability of STEs to generate quasi-continuous THz pulses offers an alternative solution to the photomixer, a key THz communication technology, and thus could lead to a promising new THz communication modality.

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A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications

Cited by 37 publications

References 91 publications

Engineering the thin film characteristics for optimal performance of superconducting kinetic inductance amplifiers using a rigorous modelling technique

Engineering the thin film characteristics for optimal performance of superconducting kinetic inductance amplifiers using a rigorous modelling technique

A distributed small signal model extraction method based on FW-EM simulation for InP HEMT

Parallel generation and coding of a terahertz pulse train

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