A Highly Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

Lai, Erh-Kun; Lue, Hang-Ting; Hsiao, Yi‐Hsuan; Hsieh, Jung-Yu; Lee, S.-C.; Lu, Chih‐Yuan; Wang, S.-Y.; Yang, Lee‐Wei; Chen, K.-C.; Gong, Jeng; Hsieh, Kuang-Yeu; Ku, J.; Liu, R.

doi:10.1109/vlsit.2006.1705209

Cited by 25 publications

(12 citation statements)

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“…Some types of multilayer resistive RAMs that are composed of transition metal-oxides, such as NiO or SrTiO3, and [Pr 1−x Ca x MnO 3 , (PraseodymiumCalcium-Manganese-Oxide)] [5]- [7] resistors and diodes have been explored for next-generation NV memory. Additionally, the two-layer NAND Flash memory by a highly stackable polycrystalline Si thin-film transistor (TFT) prototype has been presented [8]. However, most of these materials are expected to show diverse material and device characteristics between the intra-and intergrain due to the mixed-crystal structures.…”

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confidence: 99%

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Yin

Kim

Lim

et al. 2008

IEEE Trans. Electron Devices

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Abstract-Currently, both high-density 3-D stacking nonvolatile (NV) memory and embedded NV memory in advanced systems on panel (SOPs) urgently demand the assistance of new and functional transition metal-oxide materials. This is to overcome serious fabrication issues encountered in the use of conventional Si or poly-crystalline Si materials, as well as to increase storage density with lower process cost. This paper reports the fully functional NV memory structure operated by an ionic amorphous oxide semiconductor with a wide energy band gap (> 3.0 eV) in a Ga 2 O 3 -In 2 O 3 -ZnO (GIZO) system under low process temperature (< 400• C) while being combined with various metal-oxide materials of Al 2 O 3 , GIZO, and Al 2 O 3 as the electron charge's tunneling, storage, and blocking layers, respectively. The different methods of memory programs and, especially, the unique erase characteristics caused by a much wider band gap than Si were intensively being investigated, and as a result, excellent electrical results of a large program/erase window over 3.8 V at a pulse time of 10 ms are achieved.Index Terms-Amorphous, gallium indium zinc oxide (GIZO), memory, nonvolatile (NV), oxide, program/erase (P/E), thin-film transistor (TFT).

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confidence: 99%

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Yin

Kim

Lim

et al. 2008

IEEE Trans. Electron Devices

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“…15-16 is only slightly worse than that from the wet conversion. These results are encouraging since ISSG has significantly lower thermal budget thus can be applied to TFT memory devices [6,7]. …”

Section: Be-sonos Characteristics With Various O3 Top Dielectricmentioning

confidence: 72%

“…In order to clarify this possible effect, we have carried out the pulsed IV measurement [6] for BE-SONOS device. The result is shown in Fig.…”

Section: Properties Of Ultra-thin Ono Barriermentioning

confidence: 99%

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Reliability and Processing Effects of Bandgap Engineered SONOS (BE-SONOS) Flash Memory

Wang

Lue

Lai

et al. 2007

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

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The reliability properties of BE-SONOS [1] are extensively studied. BE-SONOS employs a multi-layer O1/N1/O2/N2/O3 stack, where O1/N1/O2 serves as a bandgap engineered tunneling barrier that provides an efficient hole tunneling erase but eliminates the direct tunneling leakage. BE-SONOS can overcome the fundamental limitation of the conventional SONOS, for which fast erase speed and good data retention cannot be simultaneously achieved. In this work, we provide a comprehensive understanding of the reliability of BE-SONOS. Various processes to form the critical O1/N1/O2 barrier, the trapping layer (N2), and the top blocking oxide (O3) are investigated. The results of this work provide design and processing guidelines for optimizing the performance and reliability of BE-SONOS Flash memory devices.

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“…3-D multilayerstack integrated circuits (ICs) [1], [2] and Flash memory applications [3]- [5] based on poly-Si thin-film transistor (TFT) have subsequently been introduced for high packing density, low interconnection delay, low power consumption, and low cost. Dopant activation using a high thermal budget process may cause severe diffusion and redistribution of dopants in the 3-D structure, possibly damaging the under layer devices [6], [7].…”

Section: Introductionmentioning

confidence: 99%

High-Performance Gate-All-Around Poly-Si Thin-Film Transistors by Microwave Annealing With NH $_{\rm 3}$ Plasma Passivation

Yeh

Lee

Hung

et al. 2013

IEEE Trans. Nanotechnology

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This paper introduces nanoscale gate-all-around (GAA) n-MOS polycrystalline silicon thin-film transistors (polySi TFTs) by using microwave annealing (MWA). Experimental results of MWA GAA poly-Si TFTs indicate high performances with subthreshold swing (SS) of 105 mV/dec., and I O N /I O F F ratio of 10 7 A/A. MWA reveals sufficient dopant activation efficiency, which is equivalent to rapid thermal annealing. Additionally, the short channel effect is reduced owing to the low-temperature process of MWA and superior gate control of the GAA structure. Moreover, using NH 3 plasma treatment further improves the device mobility, I O N /I O F F ratio, and SS. Importantly, the proposed MWA GAA poly-Si TFT with its high performance and lowtemperature process is highly promising for advanced 3-D ICs. Index Terms-Microwave annealing (MWA), polycrystalline silicon (poly-Si), rapid thermal annealing (RTA), thin-film transistor (TFT), 3-D ICs.

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A Highly Stackable Thin-Film Transistor (TFT) NAND-Type Flash Memory

Cited by 25 publications

References 0 publications

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Reliability and Processing Effects of Bandgap Engineered SONOS (BE-SONOS) Flash Memory

High-Performance Gate-All-Around Poly-Si Thin-Film Transistors by Microwave Annealing With NH $_{\rm 3}$ Plasma Passivation

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