A highly practical modified LOCOS isolation technology for the 256 Mbit DRAM

Ahn, Donghwan; Ahn, Su−Jin; Griffin, P.B.; Hwang, Moon-Sang; Lee, W.S.; Ahn, Seung-Han; Hwang, C.G.; Lee, M.Y.

doi:10.1109/iedm.1994.383321

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Cited by 8 publications

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“…Phase−change Random Access Memory (PRAM) is one of the most promising candidates among new nonvolatile memories (1,2). Ge 2 Sb 2 Te 5 (GST) has been adopted as a primary material, and PRAM uses two different structural phases of GST, amorphous and crystalline, for data storage.…”

Section: Introductionmentioning

confidence: 99%

Critical Quenching Speed Determining Phase of Ge₂Sb₂Te₅ in Phase--Change Memory

Suh

Kim

Noh

et al. 2006

2006 International Electron Devices Meeting

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During the phase−change process of Ge 2 Sb 2 Te 5 in PRAM (Phase−change Random Access Memory), phase−change dynamics are strongly dependent on the quenching speed, i.e. the cooling speed of melted phase−change material. Here we report the relation between quenching speed of programming pulse and phases of Ge 2 Sb 2 Te 5 in phase−change memory in detail. The existence of critical quenching speed is identified, which determines amorphous and crystalline phases in melting followed by quenching operation.

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Section: Introductionmentioning

confidence: 99%