A High-voltage MOSFET Applicable to a Highly Sensitive Solid-state Imager.

Nakayama, Miho; Ohtake, Hiroshi; Yamauchi, Masato; Tajima, Toshifumi; Watabe, Toshihisa; Takiguchi, Yuichi; Ishiguro, Yuichi; Hayashida, Tomohiro; Watanabe, Toshihide; Abe, Masahide

doi:10.3169/itej.53.142

Cited by 4 publications

(3 citation statements)

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“…We have been developing films with low-voltage signal-current multiplication to increase the sensitivity of visible-light image sensors using avalanche multiplication phenomena [4]. Avalanche multiplication usually requires a high electric field of ∼10 6 V/m, which is a problem because the withstand voltage of an imaging device readout circuit is generally less than several dozen volts [5,6]. The attainment of the required electric field with low applied voltage necessitates a reduction in the photoconductive film's thickness to a few microns.…”

Section: Introductionmentioning

confidence: 99%

Photocurrent multiplication in Ga2O3/CuInGaSe2 heterojunction photosensors

Kikuchi¹,

Imura²,

Miyakawa³

et al. 2015

Sensors and Actuators A: Physical

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Section: Introductionmentioning

confidence: 99%

Photocurrent multiplication in Ga2O3/CuInGaSe2 heterojunction photosensors

Kikuchi¹,

Imura²,

Miyakawa³

et al. 2015

Sensors and Actuators A: Physical

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“…Since the high-sensitivity mode requires electric field of 80–100 V/μm across the a-Se film [ 1 , 5 , 6 ], the operation voltage of a-Se FPDs are typically 1–1.5 kV. Such a high voltage often leads to breakdown of FET gate [ 24 ], as well as irreversible breakdown of a-Se layer due to a local field enhancement at the edge of metal electrode [ 25 , 26 ]. The local electric field can be reduced by introducing resistive interface layer, however, it sacrifices carrier transport property.…”

Section: Introductionmentioning

confidence: 99%

Development of an Amorphous Selenium-Based Photodetector Driven by a Diamond Cold Cathode

Masuzawa

Saito

Yamada

et al. 2013

Sensors

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Amorphous-selenium (a-Se) based photodetectors are promising candidates for imaging devices, due to their high spatial resolution and response speed, as well as extremely high sensitivity enhanced by an internal carrier multiplication. In addition, a-Se is reported to show sensitivity against wide variety of wavelengths, including visible, UV and X-ray, where a-Se based flat-panel X-ray detector was proposed. In order to develop an ultra high-sensitivity photodetector with a wide detectable wavelength range, a photodetector was fabricated using a-Se photoconductor and a nitrogen-doped diamond cold cathode. In the study, a prototype photodetector has been developed, and its response to visible and ultraviolet light are characterized.

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“…Combined with silicon thin-film transistor technology, this device enabled pixelated imaging with X-ray energy suitable for medical inspection. The next step should be a-Sebased high-sensitivity X-ray detector, however, the carrier multiplication could not simply be applied in a direct-conversion flat panel detector: high operation voltage required for carrier multiplication led to unexpected breakdown at the contact or thin-film transistor-based signal read-out [4][5][6]. For this reason, a-Se-based vacuum devices with electron beam read-out are attracting much attention.…”

Section: Introductionmentioning

confidence: 99%

High sensitivity photodetector made of amorphous selenium and diamond cold cathode

et al. 2014

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In the present study, high-sensitivity photodetection has been demonstrated using an amorphous selenium (a-Se) based photodetector driven by nitrogen-doped diamond cold cathode. The emission current -applied voltage characteristics are compared between different lighting conditions, and their sensitivities are evaluated in terms of nominal quantum efficiency. The estimated nominal quantum efficiency was 10-40 for visible and up to 1000 for ultraviolet, proving a successful photodetection utilizing carrier multiplication in a-Se. PACS Nos.: 73.50.Pz, 73.61.Jc, 85.45.Db. Résumé : Nous démontrons ici la photo-détection de haute sensibilité, en utilisant un photo-détecteur basé sur du sélénium amorphe (a-Se), entrainé par une cathode froide de diamant dopé à l'azote. Nous comparons sous différentes conditions les caractéristiques du courant d'émission versus le voltage appliqué et les sensibilités sont évaluées en fonction de l'efficacité quantique nominale. L'estimé de l'efficacité quantique nominale est dans la fourchette 10-40 pour le visible et monte à 1 000 pour l'UV, prouvant le succès de la photo-détection utilisant la multiplication des porteurs dans a-Se. [Traduit par la Rédaction]

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A High-voltage MOSFET Applicable to a Highly Sensitive Solid-state Imager.

Cited by 4 publications

References 0 publications

Photocurrent multiplication in Ga2O3/CuInGaSe2 heterojunction photosensors

Photocurrent multiplication in Ga2O3/CuInGaSe2 heterojunction photosensors

Development of an Amorphous Selenium-Based Photodetector Driven by a Diamond Cold Cathode

High sensitivity photodetector made of amorphous selenium and diamond cold cathode

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