A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate

Jiang, Qimeng; Wang, Minzhi; Chen, Xingbi

doi:10.1109/ted.2010.2051247

Cited by 43 publications

(15 citation statements)

References 6 publications

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“…The other parameters of the MOSFET were not adversely affected by the introduction of this P+-n junction and the only appreciable change other than that of the gate charge was the decrease of the terminal voltage by 0.6V. Also, the principle of reducing the gate charge is different from [6], [7], and [8].…”

Section: Discussionmentioning

confidence: 99%

A Trench Gate Power MOSFET with Reduced Gate Charge - A Review

2016

IJSR

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In this paper we have written the review of the work done by Ying Wang, Yan-Juan Liu, Cheng-Hao Yu, and Fei Cao in simulating a novel trench gate power MOSFET with reduced gate charge. They worked with a 2-dimensional device simulator named ATLAS and simulated their MOSFET to obtain input, output and transfer characteristics. It is found that the gate charge is reduced by 49.5% without increasing the value of R on . This is done so as to increase the switching speed of the device.

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Section: Discussionmentioning

confidence: 99%

A Trench Gate Power MOSFET with Reduced Gate Charge - A Review

2016

IJSR

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“…The principle of reducing the gate charge is different from [8], [9], and [13]. The reference [8], [9] makes the gatedrain charge change into the gate-source charge to reduce the gate-drain charge.…”

Section: B Transient Gate Chargementioning

confidence: 99%

“…Then the W-shaped gate trench structure [6], [7] is proposed to overcome this drawback. Another method is the use of a split-gate in trench [8], [9], which makes the gate-drain coupling change into gate-source coupling. The new trench structure with different gate oxide thickness and different gate electrode materials [10] is proved to be an effective way for reducing gate-drain charge.…”

Section: Introductionmentioning

confidence: 99%

A Novel Trench-Gated Power MOSFET With Reduced Gate Charge

Wang

Liu

et al. 2015

IEEE Electron Device Lett.

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In this letter, we propose a novel trench power MOSFET structure with a p-n junction in trench to reduce the gate charge. We utilize the 2-D device simulator, ATLAS, to investigate the characteristics of the proposed structure and compare with the conventional structure. As a result, the proposed structure exhibits 49.5% enhancement in gate-charge Q g as compared with the conventional structure, without degrading the other electrical characteristics.Index Terms-Trench MOSFET, gate-charge, switching speed.

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“…Furthermore, trench MOSFETs are known to suffer from high switching losses compared to lateral and vertical D-MOSFETs because of the gate-drain overlap inherent in the device architecture [6]. To solve this problem, concepts like the split-gate MOSFET [7] and the W-gated MOSFET have been developed [8]. These devices reduce the parasitic gate-drain capacitance by using the selective growth of thick oxides at the trench bottom.…”

Section: Introductionmentioning

confidence: 99%

Super-junction trench MOSFETs for improved energy conversion efficiency

Alatise

Adotei

Mawby

2011

2011 2nd IEEE PES International Conference and Exhibition on Innovative Smart Grid Technologies

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Super-junction trench MOSFETs with ion-implanted pcolumns have been fabricated alongside conventional trench MOSFETs and are characterized by inductive switching circuits. The super-junction MOSFETs are designed to be on-state resistance (R DSON ) matched with the conventional trench MOSFETs (using different die sizes). Another set of super-junction MOSFETs are fabricated with the same die area and are fitted in identical TO-220 packages. In the case of the R DSON matched devices, switching losses in the super-junction MOSFET were reduced by more than 55% whereas in the area matched devices, conduction losses were reduced by more than 50% in the super-junction MOSFETs. Using the principle of charge balance formed by very simple fabrication techniques, energy conversion efficiency has significantly been improved in power semiconductor devices.

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A High-Speed Deep-Trench MOSFET With a Self-Biased Split Gate

Cited by 43 publications

References 6 publications

A Trench Gate Power MOSFET with Reduced Gate Charge - A Review

A Trench Gate Power MOSFET with Reduced Gate Charge - A Review

A Novel Trench-Gated Power MOSFET With Reduced Gate Charge

Super-junction trench MOSFETs for improved energy conversion efficiency

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