Super-junction trench MOSFETs for improved energy conversion efficiency

Alatise, Olayiwola; Adotei, Nii-Allotey; Mawby, P.A.

doi:10.1109/isgteurope.2011.6162631

Cited by 4 publications

(2 citation statements)

References 7 publications

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“…With respect to the R ds on , the Si SJ MOSFET breaks the silicon limit owing to the structural change from a Si MOSFET [26]. This aids in achieving the low R ds on of the Si SJ MOSFET [27], allowing it to outperform its Si counterparts. The semisouth SiC JFET is no longer available as the company ceased operation in October 2012.…”

Section: Switching Performance Evaluationmentioning

confidence: 99%

Practical implementation of a silicon carbide‐based 300 kHz, 1.2 kW hard‐switching boost‐converter and comparative thermal performance evaluation

Kim¹,

Jang²,

Agelidis³

2015

IET Power Electronics

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Field experience shows that the vast majority of solar photovoltaic (PV) energy system failures are related to the power conditioning system (PCS). Among the principal reliability issues of PV PCSs are thermal management and heat extraction mechanisms. The study considers practical implementation of a DC-DC boost converter as a solar PV pre-regulator in terms of thermal management, with comparative thermal performance evaluations of silicon carbide (SiC) semiconductors and silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFETs). Thermal performance evaluation of power semiconductors is based on a 1.2 kW DC-DC converter with: (i) various switching frequencies up to 300 kHz, in steps of 25 kHz; (ii) case temperatures from 25 to 150°C; and (iii) a natural convection heatsink with temperature increase rate of 0.5°C/ W. Simulation and experimental results verify that losses from SiC semiconductors are low compared with Si MOSFETs. This provides an opportunity for designing a pre-regulator DC-DC boost converter with less effort required for thermal management and enhanced reliability.

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Section: Switching Performance Evaluationmentioning

confidence: 99%

Practical implementation of a silicon carbide‐based 300 kHz, 1.2 kW hard‐switching boost‐converter and comparative thermal performance evaluation

Kim¹,

Jang²,

Agelidis³

2015

IET Power Electronics

View full text Add to dashboard Cite

show abstract

“…In mains-voltage applications, where converter efficiency and power density are the critical design criteria, wide bandgap (WBG) semiconductor devices and SJ MOSFETs are being investigated as alternatives to the IGBT [7]. On the one hand, WBG devices draw a negligible reverse recovery current and have a lower for the same current rating [8].…”

Section: Introductionmentioning

confidence: 99%

Achieving Efficiencies Exceeding 99% in a Super-Junction 5-kW DC–DC Converter Power Stage Through the Use of an Energy Recovery Snubber and Dead-Time Optimization

Hopkins

Proynov

McNeill

et al. 2018

IEEE Trans. Power Electron.

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A highly efficient 5-kW bidirectional DC-DC converter power stage operating from a 400-V supply implementing Super-Junction (SJ) MOSFETs is presented. SJ MOSFETs have low on-state resistances and low switching losses. However, their application in voltage-source converters can be compromised by the reverse recovery behavior of their intrinsic diodes and their highly non-linear output capacitances. A series switching-aid circuit is used to control the output capacitance charging current. The dead times between switching transitions are assessed and optimized in order to deactivate the intrinsic diodes. The combination of these techniques enables very high efficiencies to be attained. Calorimetric measurements indicate a full-load efficiency of 99.1% for the prototype 5-kW DC-DC converter power stage. A loss reduction of approximately 50% is achieved with the prototype converter power stage when compared to an equivalent IGBT based power stage. Lastly, a loss vs. duty cycle function is experimentally determined which can be used to inform the design of a maximum efficiency point tracking system.

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Strengthen Anti-ESD Characteristics in an HV LDMOS With Superjunction Structures

Chen

Lai

2015

IEEE Trans. Power Electron.

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In general, the antielectrostatic discharge (ESD) ability of a high voltage (HV) MOSFET device will be very low if it is not optimized through the addition of reliability engineering. Accordingly, in this paper, some embedded superjunction (SJ) device under tests (DUTs) of 45-V HV n-channel lateral-diffused MOS (nLDMOS) are developed, which offer a low on-resistance as compared with the traditional nLDMOS due to the redistribution of electric field or/and higher doping density in the drain side. In order to evaluate how various physical parameters affect the anti-ESD capability, these DUTs will change the widths and shapes of the P/N pillars. From the testing results, it can be found that the I t2 values of SJ-nLDMOS DUTs will be higher than that of a traditional nLDMOS, while the equivalent immunity level is even greater than HBM 10 kV. In this paper, the I t2 values of developed SJ-nLDMOS DUTs were increased at least by 109%, 31%, and 159% over that of the traditional nLDMOS for the Types 1-3 embedded SJ, respectively. Moreover, in some geometry architectures of an SJ-LDMOS, the holding voltage can be greater than the traditional nLDMOS. Therefore, by considering the relationships between these three kinds of SJ-nLDMOS DUTs and the I t2 values, it can be determined that the SJ structure is good for ESD/latch-up immunities especially for the ESD reliability. Index Terms-Bipolar-CMOS-DMOS(BCD), electrostatic discharge (ESD), high voltage (HV), latch-up, low voltage, n-channel lateral-diffused MOS (nLDMOS), secondary breakdown current (I t2 ), superjunction (SJ), transmission-line pulse (TLP).

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Super-junction trench MOSFETs for improved energy conversion efficiency

Cited by 4 publications

References 7 publications

Practical implementation of a silicon carbide‐based 300 kHz, 1.2 kW hard‐switching boost‐converter and comparative thermal performance evaluation

Practical implementation of a silicon carbide‐based 300 kHz, 1.2 kW hard‐switching boost‐converter and comparative thermal performance evaluation

Achieving Efficiencies Exceeding 99% in a Super-Junction 5-kW DC–DC Converter Power Stage Through the Use of an Energy Recovery Snubber and Dead-Time Optimization

Strengthen Anti-ESD Characteristics in an HV LDMOS With Superjunction Structures

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