A high speed camera system based on an image sensor in standard CMOS technology

Stevanovic, N.; Hillebrand, M.; Hosticka, B.J.; Iurgel, U.; Teuner, A.

doi:10.1109/iscas.1999.777532

Cited by 5 publications

(4 citation statements)

References 3 publications

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“…700-s retention will be long enough for light or image sensor applications in which brightness can be mapped in space at a given time and refreshed in a short interval. With such memory characteristics, “rolling-shutter” operation typically needed for CMOS-based image sensors is not necessary, and instead desirable “global shutter” operation can be realized 41 . If one is simply to use the criterion to verify the presence of light, 10 ks retention may suffice for various short-term applications where the stored visual information may be retrieved within several hours.…”

Section: Resultsmentioning

confidence: 99%

Efficient organic photomemory with photography-ready programming speed

Kim

Seong

Lee

et al. 2016

Sci Rep

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We propose a device architecture for a transistor-type organic photomemory that can be programmed fast enough for use in electrical photography. Following the strategies used in a flash memory where an isolated charge storage node or floating gate is employed, the proposed organic photomemory adopts an isolated photo-absorption zone that is embedded between upper and lower insulator layers without directly interfacing with a semiconductor channel layer. This isolated photo-absorption zone then allows the device to operate in electrically ‘on’ state, in which the high electric-field region can have a maximal spatial overlap with the illuminated area for efficient and facile light-programming. With the proposed approach, a significant threshold voltage shift is attained even with the exposure time as short as 5 ms. High quality dielectric layers prepared by initiated chemical vapor deposition ensure erasing to occur only with electrical signal in a controlled manner. Retention time up to 700 s is demonstrated.

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Section: Resultsmentioning

confidence: 99%

Efficient organic photomemory with photography-ready programming speed

Kim

Seong

Lee

et al. 2016

Sci Rep

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“…6d. FPN reduction uses the method presented in [25], where invariability of FPN in time and a linear pixel characteristic are assumed. Under such assumptions the pixel calibration process can be expressed by the following simple equation [25,26] off pix corr corr…”

Section: Prototype Testing and Measurementsmentioning

confidence: 99%

Characteristics of an Image Sensor with Early-Vision Processing Fabricated in Standard 0.35 μm Cmos Technology

Jendernalik¹,

Jakusz²,

Blakiewicz³

et al. 2012

Metrology and Measurement Systems

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The article presents measurement results of prototype integrated circuits for acquisition and processing of images in real time. In order to verify a new concept of circuit solutions of analogue image processors, experimental integrated circuits were fabricated. The integrated circuits, designed in a standard 0.35 µm CMOS technology, contain the image sensor and analogue processors that perform low-level convolution-based image processing algorithms. The prototype with a resolution of 32 × 32 pixels allows the acquisition and processing of images at high speed, up to 2000 frames/s. Operation of the prototypes was verified in practice using the developed software and a measurement system based on a FPGA platform.

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“…No smear, no blooming and global electronic shutter are some of the most valuable characteristics needed [114]. In addition, low lag and snap-shot mode are preferable.…”

Section: Needs and Problem Solvingmentioning

confidence: 99%

“…Between 1998 and 2000, N. Stevanovic and M. Hillebrand [6,116,117,114] reported a high speed CMOS camera (see Fig. 9).…”

Section: Manufactured Imagersmentioning

confidence: 99%

Review of CMOS image sensors

Bigas

Cabruja

Salví

2006

Microelectronics Journal

481

230

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The role of CMOS Image Sensors since their birth around the 1960s, has been changing a lot. Unlike the past, current CMOS Image Sensors are becoming competitive with regard to Charged Couple Device (CCD) technology. They offer many advantages with respect to CCD, such as lower power consumption, lower voltage operation, on-chip functionality and lower cost. Nevertheless, they are still too noisy and less sensitive than CCDs.Noise and sensitivity are the key-factors to compete with industrial and scientific CCDs. It must be pointed out also that there are several kinds of CMOS Image sensors, each of them to satisfy the huge demand in different areas, such as Digital photography, industrial vision, medical and space applications, electrostatic sensing, automotive, instrumentation and 3D vision systems.In the wake of that, a lot of research has been carried out, focusing on problems to be solved such as sensitivity, noise, power consumption, voltage operation, speed imaging and dynamic range. In this paper, CMOS Image Sensors are reviewed, providing information on the latest advances achieved, their applications, the new challenges and their limitations. In conclusion, the State-of-the-art of CMOS Image Sensors. q

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A high speed camera system based on an image sensor in standard CMOS technology

Cited by 5 publications

References 3 publications

Efficient organic photomemory with photography-ready programming speed

Efficient organic photomemory with photography-ready programming speed

Characteristics of an Image Sensor with Early-Vision Processing Fabricated in Standard 0.35 μm Cmos Technology

Review of CMOS image sensors

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