Abstract:We propose a device architecture for a transistor-type organic photomemory that can be programmed fast enough for use in electrical photography. Following the strategies used in a flash memory where an isolated charge storage node or floating gate is employed, the proposed organic photomemory adopts an isolated photo-absorption zone that is embedded between upper and lower insulator layers without directly interfacing with a semiconductor channel layer. This isolated photo-absorption zone then allows the devic… Show more
“…Organic nonvolatile optoelectronic memories on the basis of organic field effect transistors (OFETs) have easy-to-integrate configuration and allow nondestructive reading and multibit storage within a single device , for applications in multilevel storage and flexible imaging circuits (photosensors). − To achieve bistable charge states that can be programed by photoirradiation for optoelectronic memory, it is usually necessary to equip OFETs with a floating gate, , a polymer electret, , or a photoswitchable molecule either in the semiconductor layer , or at the semiconductor–dielectric interface. , Herein, we demonstrate that the OFET of HBP-H can function as an organic nonvolatile optoelectronic memory without using a floating gate, an electret layer, or photochromic molecules because HBP-H is photochemically oxidized by molecular oxygen, leading to stable radical cations in the solid state. The on-state of this optoelectronic memory takes advantage of the persistent photoconductivity − of the organic phototransistor , of HBP-H, where molecular oxygen acts as deep traps for photogenerated electrons …”
Herein, we report robust π-conjugated radical cations resulting from the oxidation of hexabenzoperylene (HBP) derivatives, HBP-B and HBP-H, which have butyl and hexyl groups, respectively, attached to the same twisted double helicene π-backbone. The radical cation of HBP-B was successfully crystallized in the form of hexafluorophosphate, which exhibited conductivity as high as 1.32 ± 0.04 S cm −1 . Photochemical oxidation of HBP-H by molecular oxygen led to the formation of its radical cation in the solid state, as found with different techniques. This allowed the organic field effect transistor of HBP-H to function as a nonvolatile optoelectronic memory, with the memory switching contrast above 10 3 and long-term stability without using a floating gate, an electret layer, or photochromic molecules.
“…Organic nonvolatile optoelectronic memories on the basis of organic field effect transistors (OFETs) have easy-to-integrate configuration and allow nondestructive reading and multibit storage within a single device , for applications in multilevel storage and flexible imaging circuits (photosensors). − To achieve bistable charge states that can be programed by photoirradiation for optoelectronic memory, it is usually necessary to equip OFETs with a floating gate, , a polymer electret, , or a photoswitchable molecule either in the semiconductor layer , or at the semiconductor–dielectric interface. , Herein, we demonstrate that the OFET of HBP-H can function as an organic nonvolatile optoelectronic memory without using a floating gate, an electret layer, or photochromic molecules because HBP-H is photochemically oxidized by molecular oxygen, leading to stable radical cations in the solid state. The on-state of this optoelectronic memory takes advantage of the persistent photoconductivity − of the organic phototransistor , of HBP-H, where molecular oxygen acts as deep traps for photogenerated electrons …”
Herein, we report robust π-conjugated radical cations resulting from the oxidation of hexabenzoperylene (HBP) derivatives, HBP-B and HBP-H, which have butyl and hexyl groups, respectively, attached to the same twisted double helicene π-backbone. The radical cation of HBP-B was successfully crystallized in the form of hexafluorophosphate, which exhibited conductivity as high as 1.32 ± 0.04 S cm −1 . Photochemical oxidation of HBP-H by molecular oxygen led to the formation of its radical cation in the solid state, as found with different techniques. This allowed the organic field effect transistor of HBP-H to function as a nonvolatile optoelectronic memory, with the memory switching contrast above 10 3 and long-term stability without using a floating gate, an electret layer, or photochromic molecules.
“…Following a succession of technical advances, organic electronics have emerged as key optoelectronic device platforms. Organic light-emitting diodes (OLEDs), − organic photovoltaics (OPVs), and organic photosensors , have demonstrated their potentials toward various mainstream applications, including displays and solar cells, as well as niche applications like heart-monitoring sensors. , In addition, organic semiconductor-based devices have been utilized as key components in low-cost electronics (e.g., smart e-packaging and disposable electronic label). − However, the manufacturing cost for such applications is still not low enough for a wide usage of them in the market, and thus, cost-effective device fabrication methods are strongly desired. , While most commercialized organic devices, up to date, have been based on vacuum-evaporated small molecular thin films, solution-based polymer semiconductors are being studied as low-cost alternatives. ,, Unlike small molecular technologies, whose patterning can easily be achieved with a shadow masking, forming a pattern in solution-processed polymer semiconductor films is considered to be challenging. Inkjet printing or screen printing techniques can be employed in patterning of polymer films; however, forming an optimal formulation that can ensure both desired processability and good performance is not easily achieved. − In addition, the bank structures, which are required to keep the solution inside a given pattern, can also increase fabrication cost and complexity.…”
Section: Introductionmentioning
confidence: 99%
“…Following a succession of technical advances, organic electronics have emerged as key optoelectronic device platforms. Organic light-emitting diodes (OLEDs), 1−4 organic photovoltaics (OPVs), 5 and organic photosensors 6,7 have demonstrated their potentials toward various mainstream applications, including displays and solar cells, as well as niche applications like heart-monitoring sensors. 8,9 In addition, organic semiconductor-based devices have been utilized as key components in low-cost electronics (e.g., smart e-packaging and disposable electronic label).…”
Solution-processed polymer devices have been studied
as a low-cost
alternative to the conventional vacuum-processed organic devices.
However, forming a specific pattern on polymer semiconductor films
without costly lithography is still challenging. Herein, we report
a low-cost direct patterning method for polymer optoelectronic devices,
which can successfully engrave designated patterns on the polymer
semiconductor layer regardless of its size and even after device encapsulation.
Irradiation of a 100 ns pulse laser forms high-resolution patterns
on devices such as polymer light-emitting diodes and polymer memory
devices. The biggest advantage of the proposed patterning method is
that it does not produce any physical damage in the device, such as
leakage current or degraded light-emitting efficiency. Analysis confirms
that the laser-induced heat alters the solid or crystal structure
of the polymer semiconducting layers so that the designated areas
of the polymer devices can be selectively and deliberately deactivated.
We demonstrate the usability of the developed laser-induced direct-patterning
method on the polymer devices by engraving a digital image onto “ON-state”
light-emitting devices and by generating multiple states onto a 4
× 4 matrix polymer nonvolatile memory.
Advances in device technology have been accompanied by the development of new types of materials and device fabrication methods. Considering device design, initiated chemical vapor deposition (iCVD) inspires innovation as a platform technology that extends the application range of a material or device. iCVD serves as a versatile tool for surface modification using functional thin film. The building of polymeric thin films from vapor phase monomers is highly desirable for the surface modification of thermally sensitive substrates. The precise control of thin film thicknesses can be achieved using iCVD, creating a conformal coating on nano-, and microstructured substrates such as membranes and microfluidics. iCVD allows for the deposition of polymer thin films of high chemical functionality, and thus, substrate surfaces can be functionalized directly from the iCVD polymer film or can selectively gain functionality through chemical reactions between functional groups on the substrate and other reactive molecules. These beneficial aspects of iCVD can spur breakthroughs in device fabrication based on the deposition of robust and functional polymer thin films. This review describes significant implications of and recent progress made in iCVD-based technologies in three fields: electronic devices, surface engineering, and biomedical applications.
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