A High-Pulsed-Power Frequency Doubler to 190 GHz

Porterfield, David W.; Crowe, T.W.; Bishop, W.L.; Kurtz, D.S.; Grossman, Erich N.

doi:10.1109/icimw.2005.1572415

Cited by 10 publications

(3 citation statements)

References 3 publications

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“…The multiplication efficiency is recorded to be of the order 6%. This is quite low for a traditional frequency doubler in this range, however, this has been achieved with an epi-structures which is optimised for mixer applications [3].…”

Section: Resultsmentioning

confidence: 99%

Integrated Schottky Structures for Applications Above 100 GHz

Alderman

Sanghera

Thomas

et al. 2008

2008 European Microwave Integrated Circuit Conference

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Abstract-Recent developments in the fabrication of GaAs integrated Schottky structures for applications above 100 GHz are presented. Two approaches are discussed; the fabrication of integrated circuits using a GaAs foundry service, coupled with the research based post-processing of these structures, and the fabrication of discrete and integrated Schottky structures using a bespoke research laboratory. I. INTRODUCTIONLow capacitance GaAs Schottky diode technology is required for millimetre and sub-millimetre wave heterodyne receivers. Schottky diodes operate at both ambient and cryogenic temperatures and are uniquely able to cover the frequency range from DC to above 1 THz. Schottky diode technology has been evolving for many years and has traditionally been driven by the demands of radio astronomy and remote sensing of the atmosphere. Ground based applications, e.g. security imaging, are now increasing in importance. For these applications, Schottky based technology offers an attractive alternative to detectors and sources that require cryogenic cooling [1].Despite the growing demand for Schottky devices operating above 100 GHz, there remains limited availability within Europe and there is currently no space-qualified process available. The European Space Agency (ESA) has initiated a programme to investigate the use of the GaAs foundry service from United Monolithic Semiconductors (UMS) to fill the current gap between demand and availability (ESA AO/1-5084/06/NL/GLC). This programme aims to investigate the performance limitations of this GaAs foundry service and to explore ways of post-processing GaAs wafers to enhance device performance, for example, to reduce the dielectric loading around the anode to reduce the parasitic capacitance and the effect of dielectric loading. Using this approach, integrated Schottky structures have been designed for operation at frequencies upto 380 GHz.Schottky diode fabrication is a relatively simple process which can be established in a research environment using optical lithography with simple manual alignment, deposition and etching tools. Structures in which the Schottky contact is integrated with an embedding network can also be fabricated in such an environment. In fact, a small research laboratory,

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Section: Resultsmentioning

confidence: 99%

Integrated Schottky Structures for Applications Above 100 GHz

Alderman

Sanghera

Thomas

et al. 2008

2008 European Microwave Integrated Circuit Conference

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“…The methods currently used to generate terahertz sources include optical methods, vacuum electronics, THz quantum cascade laser, solid‐state electronic devices, etc. In recent years, much attention has been paid to solid‐state electronic device multiplier terahertz source, owing to many advantages, such as high reliability, high spectral quality, compact structure, and low power consumption .…”

Section: Introductionmentioning

confidence: 99%

A 220 GHz frequency tripler based on 3D electromagnetic model of the schottky diode and the field-circuit co-simulation method

Zhang

Zhong

Ren

et al. 2016

Microw. Opt. Technol. Lett.

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In this article, a 220 GHz frequency tripler using three‐dimensional (3D) electromagnetic simulation is designed. Due to the characteristics of extremely short working wavelength and ultra‐small circuit size of terahertz frequency multipliers, complicated parasitic effect cannot be ignored, which leads to a limited optimization space for circuit matching in the design of terahertz components. In this article, a precise 3D electromagnetic (EM) model of the planar Schottky barrier diode (SBD) is established and the field‐circuit co‐simulation method is proposed for the design of the 220 GHz tripler. Compared with the varistor diode, the frequency multiplier based on the varactor diode will produce higher output power due to its lossless mechanism. The measured results show that the output power is higher than 5 mW in the frequency range 220∼228 GHz, with the maximum output power of 6.34 mW. Typical conversion loss is 15 dB in the frequency range 216∼232 GHz. The frequency tripler has the characteristics of compact size, low loss, and high output power. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1647–1651, 2016

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“…Typically, power levels on the order of 10 µW to several milliwatts can be produced in the 300 GHz to 1000 GHz range starting with an input in the microwave region and using a chain of cascaded multipliers, with the performance (efficiency, bandwidth, and power output) of the cascaded chain being strongly dependent on impedance mismatches between adjacent multiplier stages [1] [2]. Present state-of-theart multipliers are typically fabricated as integrated circuits without use of external tuners to adjust embedding impedances [3].…”

Section: Introductionmentioning

confidence: 99%

A six-port reflectometer for in-situ monitoring of frequency multipliers

Hesler

et al. 2009

2009 IEEE MTT-S International Microwave Symposium Digest

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This paper describes a waveguide-based reflectometer designed for in-situ measurement and monitoring of the return loss between adjacent stages in a frequency multiplier chain. The reflectometer is based on a six-port architecture and a prototype instrument operating at V-band (50-75 GHz) is introduced. An in-situ calibration method based on null double injection is discussed and initial measurements to assess the performance of the prototype are presented.Index Terms-Six-port reflectometer, null double injection, frequency multiplier, WR15.

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A High-Pulsed-Power Frequency Doubler to 190 GHz

Cited by 10 publications

References 3 publications

Integrated Schottky Structures for Applications Above 100 GHz

Integrated Schottky Structures for Applications Above 100 GHz

A 220 GHz frequency tripler based on 3D electromagnetic model of the schottky diode and the field-circuit co-simulation method

A six-port reflectometer for in-situ monitoring of frequency multipliers

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