This work represents the first demonstration of in-phase power-combined frequency multipliers above 100 GHz based on a dual-chip single-waveguide topology, which consists of two integrated circuits symmetrically placed along the E-plane of a single transmission waveguide. This strategy increases by a factor of 2 the maximum sustainable input power with regard to traditional waveguide multipliers. A biasless 190 GHz Schottky doubler based on this novel concept has been designed and tested with a 6-10% conversion efficiency measured across a 177-202 GHz band when driven with a 50-100 mW input power at 300 K.
A technique has been developed which allows the fabrication of channels within the body of multiple layers of negative resist. Previously this was only possible in the positive resist system but with the transfer to negative resist, higher and more clearly defined channels are now possible. Thick negative resists are also easier to process than their positive counterparts, allowing multiple crossing channels. The physical structure of a full height W-band waveguide with an integrated E-plane filter has been fabricated with this technique. The fabrication procedure presented in this paper is quick, reproducible and easily implemented using standard photolithography equipment.
This paper presents the design, manufacturing, and characterization of a waveguide based on electromagnetic-bandgap (EBG) technology working in -band. A modified silicon EBG woodpile structure was used in order to improve the matching performance of the EBG waveguide to a standard rectangular waveguide. The transition between the silicon EBG woodpile waveguide and the conventional WR10 waveguide was optimized and a 13.5% bandwidth around 90 GHz was achieved. The measured insertion losses remained better than 3 dB in the overall working bandwidth.
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