A high-performance monolithic Q-band InP-based HEMT low-noise amplifier

A 140-GHz monolithic low noise amplifier

“…The differences in the fabrication process steps include the device isolation process, the ohmic metallization, alloying conditions and the through substrate via hole etch. The MMIC LNA's fabricated using this process have also achieved state-of-the-art high gain and low noise figure performance at lower frequencies, which include a Qband (44 GHz) two-stage LNA exhibiting 2.2-dB noise figure with 23-dB associated gain [7], a V-band three-stage LNA demonstrating less than 3-dB noise figure with 22-dB gain at 60 GHz [8], a W-band one-stage LNA showing 2.6-dB noise figure with 7-dB gain at 96 GHz [9], and a W-band four-stage balanced amplifier with small signal gain of 2 3 f 3 dB from 75 to 110 GHz [IO].…”

An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier

“…For such applications, antimonide-based compound semiconductor (ABCS) InAs/AlSb HEMTs are particularly promising because of their combination of high electron mobility and peak velocity, along with high electron concentration in the 2DEG that results in unparalleled speed-power performance. The InAs/AlSb HEMT's inherent low-voltage operation, with below 0.5 V, can reduce dc power dissipation by an order of magnitude compared with a GaAs PHEMT of equivalent performance [1], [2], and by a factor of three to four compared to an equivalent InP HEMT [3], [4]. In the case of active-array space-based radar applications, ABCS LP-LNAs are a system enabler because they permit a substantial reduction in the required spacecraft prime power and corresponding spacecraft weight and launch cost [5], [6].…”