We have demonstrated a monolithic W-band six-stage low noise amplifier/detector. using 0.1 p m passivated pseudomorphic A10.25Ga0.75As /In0 22Gao.78As,/GaAs HEMT technology. The front-end LNA, over the band from 85 to 96 GHz has achieved an average small signal gain of 40 dB whizh is the highest gain value ever reported for a MhrlIC operating in the W-band. The measured minumum resolvable temperature of the MMlC is about 1.6 O K , where the dominant noise source is attributed to be the l/f' noise of the monolithically integrated HEMI' diode.
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