Monolithic W-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs

Wang, H.; Chang, Kuo-Ming; Chen, T.H.; Tan, K. H.; Dow, G.S.; Allen, B.; Berenz, J.

doi:10.1109/gaas.1992.247226

Cited by 36 publications

(9 citation statements)

References 13 publications

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“…Comparing the microstrip-line VCO reported in [1] with this CPW VCO the Q-factors are similar in both designs and therefore the up-converted low-frequency noise power will dominate the phase noise performance. Since the small signal open loop gain of the microstrip-line VCO is higher than that of this CPW VCO, the microstrip-line VCO operated at a higher saturation condition and cause higher i P with a higher near carrier noise power.…”

Section: Discussionmentioning

confidence: 81%

“…Although this W-band GCPW VCO utilized the same HEMT device (0.1-µm GaAs-based PHEMT MMIC process provided by TRW) and a similar circuit architecture as the W-band microstrip-line VCO reported in [1], the phase noise performance is significantly different from each other. The reason is described briefly as the following.…”

Section: Discussionmentioning

confidence: 99%

“…Though they demonstrated good power performance, the special processes are not compatible with other MMIC components. With the MMIC technologies advanced in the recent years, millimeter-wave MMIC oscillators operated at W-band frequencies implemented based on HEMT and HBT devices were reported [1]- [7]. HEMT devices have the advantages of higher gain for high frequency operation and therefore quite a few MMIC VCO were reported [1]- [5].…”

Section: Introductionmentioning

confidence: 99%

“…With the MMIC technologies advanced in the recent years, millimeter-wave MMIC oscillators operated at W-band frequencies implemented based on HEMT and HBT devices were reported [1]- [7]. HEMT devices have the advantages of higher gain for high frequency operation and therefore quite a few MMIC VCO were reported [1]- [5]. On the other hand, HBTs has inherent low device 1/f noise characteristics, oscillators based on InP-based HBT to achieve low phase noise performance [6]- [7].…”

Section: Introductionmentioning

confidence: 99%

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An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

Chen

Tsai

et al. 2003

33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

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-A W-band voltage control oscillator (VCO) using 0.1-m AlGaAs/InGaAs/GaAs PHEMT MMIC technology with ultra low phase noise is presented. This VCO demonstrated an operation frequency centered at 97 GHz with a tuning range of 2 GHz and an output power of 1 mW. The measured single side-band phase noise is -88 dBc/Hz at 1MHz offset. To the best of our knowledge, this phase noise performance is not only the best among the previously reported results for HEMT MMIC VCO at this frequency, but also rivals those for most VCOs using HBTs.

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Section: Discussionmentioning

confidence: 81%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

An ultra low phase noise W-band GaAs-based PHEMT MMIC CPW VCO

Chen

Tsai

et al. 2003

33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C)

View full text Add to dashboard Cite

show abstract

“…With the MMIC technologies advanced in the recent years, millimeter-wave MMIC oscillators operated at W-band frequencies implemented based on HEMT and HBT devices were reported [1]- [7]. HEMT devices have the advantages of higher gain for high frequency operation and therefore quite a few MMIC VCO were reported [1]- [5]. On the other hand, HBTs has inherent low device 1If noise characteristics, oscillators based on InP-based HBT to achieve low phase noise performance [6]- [7].…”

Section: Introductionmentioning

confidence: 99%

An Ultra Low Phase Noise W-Band GaAs-Based PHEMT MMIC CPW VCO

Chen¹,

Цай²,

Lu³

et al. 2003

33rd European Microwave Conference, 2003

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A W-band voltage control oscillator (VCO) using 0.1m AlGaAs/InGaAs/GaAs PHEMT MMIC technology with ultra low phase noise is presented. This VCO demonstrated an operation frequency centered at 97 GHz with a tuning range of 2 GHz and an output power of 1 mW. The measured single side-band phase noise is -88 dBc/Hz at 1MHz offset. To the best of our knowledge, this phase noise performance is not only the best among the previously reported results for HEMT MMIC VCO at this frequency, but also rivals those for most VCOs using HBTs.

show abstract