2017
DOI: 10.1109/led.2017.2755989
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A High-PDE, Backside-Illuminated SPAD in 65/40-nm 3D IC CMOS Pixel With Cascoded Passive Quenching and Active Recharge

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Cited by 68 publications
(36 citation statements)
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“…36 Nonetheless, its overuse of area and power make it not appealing to exploit in SPADs front end. Regarding the area, 35 has the least area. Its hold-off time implementation is same as 16 , and off-chip pin is used to reduce area.…”
Section: Resultsmentioning
confidence: 99%
“…36 Nonetheless, its overuse of area and power make it not appealing to exploit in SPADs front end. Regarding the area, 35 has the least area. Its hold-off time implementation is same as 16 , and off-chip pin is used to reduce area.…”
Section: Resultsmentioning
confidence: 99%
“…The sensor employs a SPAD with a p-i-n structure reported in [ 17 ]. In order to achieve both high PDP and fill factor, a cascoded quenching circuit, Figure 2 , is used to allow the SPAD to operate at excess bias voltages up to 5.2 V without exceeding the 3.6 V reliability limit across the gate-source, gate-drain and drain-source junctions of any device [ 18 ]. Since this technique only uses transistors, the layout is very dense, achieving an overall fill factor of 28% with a pixel pitch of 28.5 μm.…”
Section: Sensor Designmentioning
confidence: 99%
“…Hybrid Cu-Cu bonding offers a mass-manufacturable platform to implement these sensors by providing high fill-factor SPADs optimized for NIR stacked on dense nanoscale digital processors [4][5] [6].…”
Section: Introductionmentioning
confidence: 99%