A High-Order Temperature Compensated CMOS Bandgap Reference

A CMOS bandgap reference based on switched capacitor is proposed in this paper. Temperature compensation is adopted to achieve better temperature coefficient (TC). Two first order compensated reference voltages are combined to realize a new reference voltage with lower TC. Due to the switched capacitor operation, power and area of circuit are reduced. Simulation result shows that the bandgap reference achieves TC of 14.5 ppm/ • C from −40 • C to 120 • C. Bandgap reference output voltage is 235 mV with a ripple voltage of 700 µV.

“…The expression of zero TC points of V ref,1 and V ref,2 , T 1 and T 2 , can be derived from the two equations above, as shown in Eqs. ( 5) and (6).…”

Section: Compensation Principlementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A CMOS bandgap reference based on switched capacitor with temperature compensation method

Ran

Chen

Wang

et al. 2022

“…But the traditional first-order bandgap reference can obtain low-temperature -coefficient in a defined temperature point not a higher temperature range, which does not meet the requirement of high-precision bandgap reference. 1 The and M3 have the same device parameter, the emitter area of Q2 is N times that of Q1. The resistors R1-R4 are made of the same material for offsetting the influence of the resistance temperature.…”

Section: Proposed Designmentioning

confidence: 99%

“…Bandgap reference is a key component of analog, digital or mixed signal circuits such as analog to digital converters, digital to analog converters, low drop-out voltage regulators, phase-locked loops, and many other electronic devices [1,2,3,4,5,6,7]. Bandgap references provide voltage with a well-defined and stable insensitive to power supply voltage and temperature variation.…”

Section: Introductionmentioning

confidence: 99%

A 1.2-V 2.18-ppm/°C curvature-compensated CMOS bandgap reference

Zhang

Wang

et al. 2021

A high-precision and low-temperature-coefficient bandgap voltage reference is proposed in 0.11 μm CMOS process. A temperature piecewise compensation circuit is added to a traditional bandgap reference to decrease the temperature coefficient (TC). The digital trimming technology has been used to solve the deviation of TC and output voltage resulting from process corner and mismatch. Simulation result shows that the bandgap reference achieves TC of 2.18 ppm/°C from −40°C to 125°C. Bandgap reference output voltage is 1.2 V with in the error of ±5 mV.

“…Typically, the base-emitter voltage is expressed as follow. (1) where 𝑉𝑉 𝐺𝐺0 is the silicon voltage extrapolated to 0K, 𝑃𝑃 𝑅𝑅 is the reference temperature, 𝑘𝑘 is the Boltzmann constant, 𝑞𝑞 is the electron charge, and 𝜂𝜂 and 𝛼𝛼 are the temperature dependent parameters of silicon mobility and the collector current respectively [16][17][18][19][20]. As shown in equation (1), the first term of 𝑉𝑉 𝐵𝐵𝐵𝐵 is independent of temperature, while the second term and the third term are linearly and nonlinearly dependent on temperature.…”

Section: Introductionmentioning

confidence: 99%

A -80dB PSRR 1.166ppm/°C bandgap voltage reference with improved high-order temperature compensation

Meng

Xiao

Yao

et al. 2023

A novel high precision and high PSRR bandgap voltage reference with improved high-order temperature compensation is proposed in this paper. An accurate curvature compensation topology is designed to compensate the reference voltage in the high and low temperature sections respectively. A pre-regular circuit is deployed to improve the PSRR and enlarge input voltage range. Implemented with TSMC 0.18um process, this design achieves an ultra-low temperature coefficient (TC) of 1.166ppm/°C from −40 °C to 125 °C with a high PSRR of -80dB at 1KHz.