A high-gain, modulation-doped photodetector using low-temperature MBE-grown GaAs

Subramanian, S.; Schulte, D.; Ungier, L.; Zhao, Pengxiang; Plant, T.K.; Arthur, John R.

doi:10.1109/55.363212

Cited by 14 publications

(9 citation statements)

References 10 publications

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“…The close correlation between the transconductance of the device in darkness and its on‐gate current response to ionizing radiation indicates that the observed signal is directly dependent on the fundamental transistor characteristics and gives experimental proof for a photovoltaic response mechanism. Based on these data, it is possible to conclude that the mechanism is comparable to that reported for HEMT‐based UV detectors 20–25 as will be described below.…”

Section: Methodssupporting

confidence: 70%

“…However, these longer carrier lifetimes necessarily lead to longer response times. Nevertheless, it is expected that these lifetimes can be tuned by, for example, the appropriate choice of layer compositions and thicknesses, where the InGaAs/GaAs system could prove advantageous 20, 21, 23, in order to provide an engineered balance between the device sensitivity and response time.…”

Section: Discussionmentioning

confidence: 99%

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Ultrahigh gain AlGaN/GaN high energy radiation detectors

Howgate

Hofstetter

Schoell

et al. 2012

Physica Status Solidi (a)

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Due to its remarkable tolerance to high energy ionizing radiation, GaN has recently attracted attention as a promising material for dosimetry applications. However, materials issues that lead to persistent photoconductivity, poor sensitivity, and requirements for large operational voltages have been hurdles to realization of the full potential of this material. Here we demonstrate that the introduction of a two-dimensional electron gas channel, through the addition of AlGaN/GaN heterointerfaces, can be used to create intrinsic amplification of the number of electrons that can be collected from single ionization events, yielding exceptionally large sensitivities in ultralow dose rate regimes. Furthermore, anomalous photo-responses, which severely limit response times of GaN-based devices, can be eliminated using these heterostructures. Measurements using focused monochromatic synchrotron radiation at 1-20 keV, as well as focused 20 MeV protons, reveal that these devices provide the capability for high sensitivity and resolution real time monitoring, which is competitive with and complementary to state-of-the-art detectors. Therefore, AlGaN/GaN heterostructure devices are extremely promising for future applications in fields ranging from high energy physics to medical imaging.

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Section: Methodssupporting

confidence: 70%

Section: Discussionmentioning

confidence: 99%

Ultrahigh gain AlGaN/GaN high energy radiation detectors

Howgate

Hofstetter

Schoell

et al. 2012

Physica Status Solidi (a)

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“…[1][2][3][4][5] Unlike conventional MBE GaAs, the LT-GaAs grown at 200-300°C is nonstoichiometric owing to the incorporation of 1%-2% excess arsenic, [6][7][8] which is strongly dependent on the growth temperature and arsenic pressure. [6][7][8] The excess arsenic induces a high density of antisite defects As Ga , of the order 10 19 cm Ϫ3 .…”

Section: Introductionmentioning

confidence: 99%

Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing

Luo

Thomas

Morgan

et al. 1996

Journal of Applied Physics

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Articles you may be interested inEffect of thermal annealing on optical emission properties of lowtemperature grown AlGaAs/GaAs multiple quantum wells Annihilation of monolayer holes on molecular beam epitaxy grown GaAs surface during annealing as shown by in situ scanning electron microscopyThe effects of growth temperature and subsequent annealing temperatures on the electrical properties of the low temperature ͑LT͒ grown GaAs have been investigated. It was found that the resistivity of the as-grown LT-GaAs layer increased with increasing growth temperature, but was accompanied by a reduction of breakdown voltage over the same temperature range. Thermal annealing of the samples caused the resistivity to rise exponentially with increasing annealing temperature T A , giving an activation energy of E A ϭ2.1 eV. The transport of the LT-GaAs layers grown at T g р250°C was found to be dominated by hopping conduction in the entire measurement temperature range ͑100-300 K͒, but following annealing at T A Ͼ500°C, the resistivity-temperature dependence gave an activation energy of ϳ0.7 eV. The breakdown voltage V BD , for as-grown LT-GaAs was enhanced on lowering the measurement temperature, but conversely, decreased over the same temperature range following annealing at T A Ͼ500°C. The hopping conduction between arsenic defects, or arsenic clusters in annealed samples, is believed to be responsible for the observed electrical breakdown properties. Since the resistivities of the as-grown LT-GaAs layers are dependent, solely, on the excess arsenic, which in turn depends on the growth temperature, then the resistivities obtained can be used as a measure of the growth temperature.

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“…Recently, devices have been exhibited that use internal gain to increase the responsivity. One was a HEMT version, where the HEMT channel was grown at low temperatures and thus contained arsenic clusters (93). The other was a photoconductor with an n-GaAs : As channel and ohmic contacts separated by 1 jlm, as illustrated in Figure 33 (94).…”

mentioning

confidence: 99%

Low-Temperature Grown III-V Materials

Melloch¹,

Woodall²,

Harmon³

et al. 1995

Annu. Rev. Mater. Sci.

125

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MEL LOCH ET AL quality single crystals. These materials are arsenides such as GaAs, AIGaAs, and InGaAs containing arsenic clusters. The composites are formed by incorporating excess arsenic in the semiconductor, which per cipitates in the anneal. The incorporation of the excess arsenic is accomplished by molecular beam epitaxy at low substrate temperatures. The cluster density can be controlled with the coarsening annealing. The positioning of the clusters can be controlled with heterojunctions and doping. These composites exhibit several interesting properties, including high-resistivity, appreciable optical absorption below the band gap of the semiconductor matrix material, a large electro-optic effect, and very short carrier lifetimes.

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A high-gain, modulation-doped photodetector using low-temperature MBE-grown GaAs

Cited by 14 publications

References 10 publications

Ultrahigh gain AlGaN/GaN high energy radiation detectors

Ultrahigh gain AlGaN/GaN high energy radiation detectors

Transport properties of GaAs layers grown by molecular beam epitaxy at low temperature and the effects of annealing

Low-Temperature Grown III-V Materials

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