A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability

Rahimo, Munaf; Schlapbach, U.; Kopta, A.; Vobecký, J.; Schneider, Daniel; Baschnagel, Andreas

doi:10.1109/ispsd.2008.4538899

Cited by 46 publications

(18 citation statements)

References 6 publications

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“…It is desirable to have a high plasma concentration in the upper part of the drift region (closer to the gate) to reduce the on-state losses in IGBT mode, but in order to minimise the reverse recovery losses of the diode, a low plasma concentration is desirable. These contradictory aims are difficult to optimise, but typically local lifetime control helps to achieve selective plasma reduction [16], [17].…”

Section: B a Trade-off Between The Igbt On-state Losses And The Diodmentioning

confidence: 99%

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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The Reverse Conducting IGBT has several benefits over a separate IGBT and diode solution and has the potential to become the dominant device within many power electronic applications; including, but not limited to, motor control, resonant converters, and switch mode power supplies. However, the device inherently suffers from many undesirable design trade-offs which have prevented its widespread use. One of the most critical issues is the snapback seen in the forward conduction characteristic which can prevent full turn-on of the device and result in the device becoming unsuitable for parallel operation (required in many high voltage modules). This phenomenon can be suppressed but at the expense of the reverse conduction performance. This paper provides an overview of the technical design challenges presented by the RC-IGBT structure and reviews alternative device concepts which have been proposed in literature. Analysis shows that these alternate concepts either present a trade-off in performance characteristics, an inability to be manufactured, or a requirement for a custom gate drive.

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Section: B a Trade-off Between The Igbt On-state Losses And The Diodmentioning

confidence: 99%

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Findlay

Udrea

2019

IEEE Trans. Electron Devices

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“…RC-IGBT's combine in their structure an IGBT with a MOSFET basic cell structure that exploits its integral diode [4,7,8]. Determining how this integration is done can be useful for understanding where the weakest spots could arise in any working condition.…”

Section: Studied Samples Descriptionmentioning

confidence: 99%

“…In this sense, the behavior of reverse conducting IGBTs (RC-IGBTs) based on Trench structures is something not well known. The monolithical integration of the free-wheeling diode with the IGBT implies a manufacturing cost reduction, yielding to more compact devices with some design challenges, mostly in high voltage applications [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications

Perpiñà¹,

Jordà²,

León³

et al. 2014

Microelectronics Reliability

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“…The tradeoff is difficult to be optimized in the conventional RC-IGBT [10]. Moreover, solving or even alleviating the snapback problem needs a huge width of the p1-emitter, which will cause current nonuniformity in the entire device in the reverse conduction state [11]. As shown in Fig.…”

Section: Electrical Characteristicsmentioning

confidence: 99%

An Investigation of a Novel Snapback-Free Reverse-Conducting IGBT and With Dual Gates

Zhu

Chen

2012

IEEE Trans. Electron Devices

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A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with an automatically controlled anode gate, named AG-RC-IGBT, is proposed in this paper, wherein a gate on the reverse IGBT is intrinsically off in the forward conduction state and can be automatically turned on in the reverse conduction state. Therefore, bidirectional conduction capability with snapback-free characteristics is achieved in the novel RC-IGBT. Depending on the parameters set on the reverse IGBT, its operation mode can be either like an antiparallel IGBT or like an antiparallel MOS-controlled thyristor (MCT). The antiparallel MCT mode can yield low snapback current densities and low ON-state voltages in both forward and reverse conductions. Two-dimensional numerical simulations show that snapback-free characteristics are obtained in the AG-RC-IGBT antiparallel with an IGBT by a 15-μm-wide half-pitch in both forward and reverse conduction states. The antiparallel MCT mode achieves low ON-state voltages of 0.97 and 1.6 V at the current density of 200 A/cm 2 in reverse and forward conduction states, respectively.

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A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability

Cited by 46 publications

References 6 publications

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Reverse-Conducting Insulated Gate Bipolar Transistor: A Review of Current Technologies

Comparison of temperature limits for Trench silicon IGBT technologies for medium power applications

An Investigation of a Novel Snapback-Free Reverse-Conducting IGBT and With Dual Gates

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