A Generic CMOS Compatible Piezoelectric Multilayer Actuator Approach Based on Permanent Ferroelectric Polarization Inversion In Al<sub>1-X</sub> Sc<sub>x</sub>N

Fichtner, Simon; Kaden, D.; Lofink, Fabian; Wagner, Bernhard

doi:10.1109/transducers.2019.8808624

Cited by 8 publications

(4 citation statements)

References 8 publications

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“…The PUND result indicates a remanent polarization ~80 µC/cm 2 in the AlScN film and the onset of ferroelectric switching is over 50 V for a 10 µs pulse. Since the coercive voltage of a ferroelectric thin-film can be associated with the frequency (or pulse width) of the applied voltage [7,[20][21][22], another PUND test using monopolar triangular wave with a 100 ms pulse width and a zero-to-peak voltage of 40 V was conducted and is presented as the inset of Fig. 2a (See also Supplementary Fig.…”

Section: Performance Of Alscn/mos 2 Fe-fetsmentioning

confidence: 99%

“…The PUND result indicates a remanent polarization of ∼80 μC/cm 2 in the AlScN film, and the onset of ferroelectric switching is over 50 V for a 10 μs pulse. Since the coercive voltage of a ferroelectric thin film can be associated with the frequency (or pulse width) of the applied voltage, ,− another PUND test using a monopolar triangular wave with a 100 ms pulse width and a zero to peak voltage of 40 V was conducted and is presented as the inset of Figure a (see also Figure S4b in the Supporting Information). This PUND measurement indicates the same remanent polarization of ∼80 μC/cm 2 and a switching voltage between 30 and 40 V under conditions similar to those of the device measurement and simulations.…”

Section: Performance Of Alscn/mos2 Fe-fetsmentioning

confidence: 99%

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Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

et al. 2021

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In 1963, Moll and Tarui [1] suggested that the field-effect conductance of a semiconductor could be controlled by the remanent polarization of a ferroelectric (FE) material to create a ferroelectric field-effect transistor (FE-FET). However, subsequent efforts to produce a practical, compact FE-FET have been plagued by low retention and incompatibility with Complementary Metal Oxide Semiconductor (CMOS) process integration. These difficulties led to the development of trappedcharge based memory devices (also called floating gate or flash memory), and these are now the mainstream non-volatile memory (NVM) technology [2]. Over the past two decades, advances in oxide FE materials have rejuvenated the field of ferroelectrics and made FE random access memories (FE-RAM) a commercial reality [3][4][5]. Despite these advances, commercial FE-RAM based on lead zirconium titanate (PZT) has stalled at the 130 nm due to process challenges [6].The recent discovery of scandium doped aluminum nitride (AlScN) as a CMOS compatible ferroelectric [7] presents new opportunities for direct memory integration with logic transistors due to the low temperature of AlScN deposition (approx. 350 °C). This temperature is compatible with CMOS back end of line processes. Here, we present a FE-FET device composed of an AlScN FE dielectric layer integrated with a channel layer of a van der Waals two-dimensional (2D) semiconductor, MoS2. Our devices show an ON/OFF ratio ~ 10 6 , concurrent with a normalized memory window of 0.3 V/nm. The devices also demonstrate stable, two-state memory retention for up to 10 4 seconds. Our simulations and experimental results suggest that the combination of AlScN and 2D semiconductors is nearly ideal for low power FE-FET memory. Furthermore, the low processing temperatures required for device fabrication allow extreme scaling because the devices are compatible with back-end-of-the-line (BEOL) Si CMOS. These results demonstrate a new approach in embedded memory and in-memory computing, and could even lead to effective neuromorphic computing architectures.

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Section: Performance Of Alscn/mos 2 Fe-fetsmentioning

confidence: 99%

Section: Performance Of Alscn/mos2 Fe-fetsmentioning

confidence: 99%

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

et al. 2021

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“…[18][19][20] Recently, wurtzite Al 1-x Sc x N films are reported to show ferroelectricity with a high P r of over 100 μC cm −2 above 30 nm in thickness. [21][22][23][24] Also, Al 1−x Sc x N films were reported to show ferroelectricity with a thickness of 9 nm. 25,26) The feasibility of the ferroelectric Al 1−x Sc x N films for large-scale RAM applications has been assessed based on their ferroelectric properties.…”

Section: Introductionmentioning

confidence: 99%

Influence of sputtering power on the switching and reliability of ferroelectric Al_0.7Sc_0.3N films

Shibukawa

Tsai

Hoshii

et al. 2022

Jpn. J. Appl. Phys.

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The sputtering power dependence of 40-nm-thick Al0.7Sc0.3N ferroelectric properties was characterized from 200 to 300 W. X-ray rocking curve revealed higher orientated growth into c-axis with higher sputtering power. Films formed by high power showed reduced leakage current with higher breakdown field, enabling to apply high field for ferroelectric switching. A high remnant polarization (Pr) of 130 μC/cm2 was obtained with a coercive field (Ec) of 6 MV/cm. The switching cycle test revealed a wake-up effect for all the films; increasing the leakage current and modifying the Ec. We anticipate the change is attributed to the existence and the generation of nitrogen vacancies (VN) in the films.

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“…24,25) Besides, ferroelectric Al 1−x Sc x N films were reported in 2019 with a high remnant polarization (P r ) of over 100 μC cm −2 . 26,27) A high P r is also attractive because the electrode of the ferroelectric capacitor can be further reduced for higher volume density, and the current sensing can be easy against noise during the write and read operations. One of the issues of the Al 1−x Sc x N films is that the coercive field (E C ) is relatively high, which is dependent on the composition (x) of Sc atoms in the Al 1−x Sc x N films and is controllable.…”

Section: Introductionmentioning

confidence: 99%

On the thickness scaling of ferroelectricity in Al_0.78Sc_0.22N films

Tsai

Hoshii

Wakabayashi

et al. 2021

Jpn. J. Appl. Phys.

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Thickness scaling on ferroelectric properties of sputter-deposited poling-free Al0.78Sc0.22N films has been examined. The c-axis oriented films were confirmed by X-ray rocking curve measurements with a film as thin as 10 nm. Ferroelectric-type hysteresis and poling-free behaviors are observed from the capacitance measurements, even with a thickness of 20 nm. The remnant polarization (P r) shows a gradual degradation when the thickness is less than 35 nm. The switching (SW) cycle test reveals a wake-up effect for the film, especially for thick films of over 35 nm. A longer SW cycle of over 105 times can be obtained with thinner Al0.78Sc0.22N films around 20 nm at the cost of P r.

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A Generic CMOS Compatible Piezoelectric Multilayer Actuator Approach Based on Permanent Ferroelectric Polarization Inversion In Al_1-X Sc_xN

Cited by 8 publications

References 8 publications

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

Influence of sputtering power on the switching and reliability of ferroelectric Al_0.7Sc_0.3N films

On the thickness scaling of ferroelectricity in Al_0.78Sc_0.22N films

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A Generic CMOS Compatible Piezoelectric Multilayer Actuator Approach Based on Permanent Ferroelectric Polarization Inversion In Al1-X ScxN

Cited by 8 publications

References 8 publications

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films

On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films

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Product

Resources

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A Generic CMOS Compatible Piezoelectric Multilayer Actuator Approach Based on Permanent Ferroelectric Polarization Inversion In Al_1-X Sc_xN

Influence of sputtering power on the switching and reliability of ferroelectric Al_0.7Sc_0.3N films

On the thickness scaling of ferroelectricity in Al_0.78Sc_0.22N films