The sputtering power dependence of 40-nm-thick Al0.7Sc0.3N ferroelectric properties was characterized from 200 to 300 W. X-ray rocking curve revealed higher orientated growth into c-axis with higher sputtering power. Films formed by high power showed reduced leakage current with higher breakdown field, enabling to apply high field for ferroelectric switching. A high remnant polarization (Pr) of 130 μC/cm2 was obtained with a coercive field (Ec) of 6 MV/cm. The switching cycle test revealed a wake-up effect for all the films; increasing the leakage current and modifying the Ec. We anticipate the change is attributed to the existence and the generation of nitrogen vacancies (VN) in the films.
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