A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios

Kuchta, Dawid; Gryglewski, D.; Wojtasiak, Wojciech

doi:10.3390/mi11040398

Cited by 14 publications

(8 citation statements)

References 29 publications

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“…This is a serious problem for the variable-envelope signals which are particularly sensitive to distortions caused by HPAs as a result of nonlinearity and self-heating effect of transistor. The impact both effects and discloses itself in the form of amplifier transmittance changes in time [10]. In the case of power amplifiers for wireless networks, parameters such as AM-AM and AM-PM conversions are often used to describe the effect of transistor nonlinearity.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Self-Heating Process in GaN-Based HEMTs

et al. 2020

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Thermal characterization of modern microwave power transistors such as high electron-mobility transistors based on gallium nitride (GaN-based HEMTs) is a critical challenge for the development of high-performance new generation wireless communication systems (LTE-A, 5G) and advanced radars (active electronically scanned array (AESA)). This is especially true for systems operating with variable-envelope signals where accurate determination of self-heating effects resulting from strong- and fast-changing power dissipated inside transistor is crucial. In this work, we have developed an advanced measurement system based on DeltaVGS method with implemented software enabling accurate determination of device channel temperature and thermal resistance. The methodology accounts for MIL-STD-750-3 standard but takes into account appropriate specific bias and timing conditions. Three types of GaN-based HEMTs were taken into consideration, namely commercially available GaN-on-SiC (CGH27015F and TGF2023-2-01) and GaN-on-Si (NPT2022) devices, as well as model GaN-on-GaN HEMT (T8). Their characteristics of thermal impedance, thermal time constants and thermal equivalent circuits were presented. Knowledge of thermal equivalent circuits and electro–thermal models can lead to improved design of GaN HEMT high-power amplifiers with account of instantaneous temperature variations for systems using variable-envelope signals. It can also expand their range of application.

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Section: Introductionmentioning

confidence: 99%

Characterization of Self-Heating Process in GaN-Based HEMTs

et al. 2020

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“…A radio frequency (RF) amplifier is a key component of the RF front-end [ 1 , 2 ], which has been widely used in various radio systems [ 3 ], such as navigation systems [ 4 ], radar [ 5 , 6 ] and satellite communication systems [ 7 ], mobile communication systems [ 8 ], positioning systems [ 9 ], etc. Due to different application scenarios and requirements, the above radio systems usually need to work in various environments.…”

Section: Introductionmentioning

confidence: 99%

Modeling of Key Specifications for RF Amplifiers Using the Extreme Learning Machine

2022

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The amplifier is a key component of the radio frequency (RF) front-end, and its specifications directly determine the performance of the system in which it is located. Unfortunately, amplifiers’ specifications degrade with temperature and even lead to system failure. To study how the system failure is affected by the amplifier specification degradation, it is necessary to couple the amplifier specification degradation into the system optimization design. Furthermore, to couple the amplifier specification degradation into the optimal design of the system, it is necessary to model the characteristics of the amplifier specification change with temperature. In this paper, the temperature characteristics of two amplifiers are modeled using an extreme learning machine (ELM), and the results show that the model agrees well with the measurement results and can effectively reduce measurement time and cost.

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“…To date, interest in Gallium nitride (GaN) high power amplifiers (PAs) for applications such as wireless communications, space technology, electronic warfare systems, and test equipment has been increasing. The power amplifier, as a key element of RF transmitters, directly and significantly affects operational quality in these applications [1]- [3].…”

Section: Introductionmentioning

confidence: 99%

Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers

Sato

Niida

Yamada

et al. 2021

IEICE Trans. Electron.

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This paper presents recent progress on high frequency and wide bandwidth GaN high power amplifiers (PAs) that are usable for highdata-rate wireless communications and modern radar systems. The key devices and design techniques for PA are described in this paper. The results of the state-of-the art GaN PAs for microwave to millimeter-wave applications and design methodology for ultra-wideband GaN PAs are shown. In order to realize high output power density, InAlGaN/GaN HEMTs were employed. An output power density of 14.8 W/mm in S-band was achieved which is 1.5 times higher than that of the conventional AlGaN/GaN HEMTs. This technique was applied to the millimeter-wave GaN PAs, and a measured power density at 96 GHz was 3 W/mm. The modified Angelov model was employed for a millimeter-wave design. Wband GaN MMIC achieved the maximum Pout of 1.15 W under CW operation. The PA with Lange coupler achieved 2.6 W at 94 GHz. The authors also developed a wideband PA. A power combiner with an impedance transformation function based on the transmission line transformer (TLT) technique was adopted for the wideband PA design. The fabricated PA exhibited an average Pout of 233 W, an average PAE of 42 %, in the frequency range of 0.5 GHz to 2.1 GHz.

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A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios

Cited by 14 publications

References 29 publications

Characterization of Self-Heating Process in GaN-Based HEMTs

Characterization of Self-Heating Process in GaN-Based HEMTs

Modeling of Key Specifications for RF Amplifiers Using the Extreme Learning Machine

Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers

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