A GaAs/AlAs Multilayer Cavity with Self-Assembled InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Ultrafast All-Optical Switching Applications

Kitada, Takahiro; Kanbara, Toshiyuki; Morita, Ken; Isu, Toshiro

doi:10.1143/apex.1.092302

Cited by 49 publications

(46 citation statements)

References 8 publications

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“…In a previous study [6], the optical Kerr signal intensity was shown to be increased by two orders of magnitude when the nonlinear refractive index of the λ/2 cavity layer increased by only one order of magnitude. Furthermore, the nonlinear refractive index of the cavity layer is the main influence on the optical Kerr signals, although the optical intensity is distributed throughout the cavity layers, including the DBR layers, as shown in Fig.…”

Section: Discussionmentioning

confidence: 87%

“…These results indicate that the strongly enhanced optical intensity due to the cavity effects plays an important role in the nonlinear optical response of the materials in the structure. In a previous simulation [6], we showed that the optical Kerr signal intensity depended strongly on the nonlinearity of the half-wavelength (λ/2) cavity layer despite being only a small fraction of the total cavity thickness.…”

mentioning

confidence: 85%

“…Enhancement of the nonlinear response is required in order to achieve highefficiency switches. Recently, we proposed a planar-type optical Kerr gate switch using a GaAs/AlAs multilayer cavity structure with InAs quantum dots embedded in strain-relaxed barriers [6]. We showed through a simulation that large optical Kerr signals were obtained due to enhanced optical intensity and enlarged nonlinear phase shifts in the multilayer cavity structure.…”

mentioning

confidence: 99%

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Optical Kerr signals of GaAs/AlAs multilayer cavities with two‐photon resonant quantum wells in the half‐wavelength layer

Isu

Kanbara

Takahashi

et al. 2010

Phys. Status Solidi (c)

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Optical Kerr signals from GaAs/AlAs multilayer micro‐cavities with GaAs/AlGaAs multi‐quantum wells (MQW) in the half‐wavelength cavity layer were investigated. The cavity‐mode‐wavelengths were set at the resonance region of two‐photon absorption of the MQWs in the 1.5‐μm band. The measured intensities of the signals depended strongly on the cavity‐mode wavelength, although the cavity layers including the MQW and multilayers maintained approximately the same structure. The nonlinearity of the MQW is considered to vary considerably at the resonant wavelength of the two‐photon absorption. The results indicate that the optical Kerr signal of the multilayer micro‐cavity is dominated by the nonlinearity of the cavity layer, although the cavity layer is only a small part of the total cavity thickness. This experimentally confirms the results of a previous simulation study on the multilayer cavities. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Discussionmentioning

confidence: 87%

mentioning

confidence: 85%

mentioning

confidence: 99%

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Optical Kerr signals of GaAs/AlAs multilayer cavities with two‐photon resonant quantum wells in the half‐wavelength layer

Isu

Kanbara

Takahashi

et al. 2010

Phys. Status Solidi (c)

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“…16 [69], with the possible trade-off of losing the large field enhancement at resonance. Alternatively, the experimental demonstration of the QD-based Kerr nonlinearity has been achieved with a resonance pumping scheme where a cross-Nicol configuration is applied [107,108]. Figure 7(a) shows the pump beam is 45 o polarized compared to the original polarization of the probe beam along the y-axis.…”

Section: Kerr Nonlinearitymentioning

confidence: 99%

Photonic switching devices based on semiconductor nano-structures

Jin¹,

Wada²

2014

J. Phys. D: Appl. Phys.

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Abstract:Focusing and guiding light into semiconductor nanostructures can deliver revolutionary concepts for photonic devices, which offer a practical pathway towards next-generation power-efficient optical networks. In this review, we consider the prospects for photonic switches using semiconductor quantum dots (QDs) and photonic cavities which possess unique properties based on their low dimensionality. The optical nonlinearity of such photonic switches is theoretically analysed by introducing the concept of a field enhancement factor. This approach reveals drastic improvement in both power-density and speed, which is able to overcome the limitations that have beset conventional photonic switches for decades. In addition, the overall power consumption is reduced due to the atom-like nature of QDs as well as the nano-scale footprint of photonic cavities. Based on this theoretical perspective, the current state-of-the-art of QD/cavity switches is reviewed in terms of various optical nonlinearity phenomena which have been utilized to demonstrate photonic switching. Emerging techniques, enabled by cavity nonlinear effects such as wavelength tuning, Purcell-factor tuning and plasmonic effects are also discussed.

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“…We have demonstrated optical Kerr gate switches based on a GaAs=AlAs multilayer cavity with InAs quantum dots (QDs) embedded in strain-relaxed barriers. [10][11][12][13][14][15] The strong internal light electric field due to the cavity effects markedly enhances of nonlinear phase shift in the halfwavelength (λ=2) cavity layer containing QDs. Vertical geometry all-optical switches based on the reflectance modulation of conventional InAs QDs placed in a GaAs= AlAs multilayer cavity have also been demonstrate by Jin and coworkers.…”

Section: Introductionmentioning

confidence: 99%

GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

Lu¹,

Ota²,

Kumagai³

et al. 2017

Jpn. J. Appl. Phys.

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We have investigated a GaAs/AlAs triple-coupled multilayer cavity structure with InAs quantum dots for an ultrafast wavelength conversion device. Three cavity modes with the resonance frequencies ω 1 , ω 2 , and ω 3 were used for efficient wavelength conversion via a four-wave mixing (FWM) process. Identical frequency separation between two adjacent modes (ω 1 % ω 2 = ω 2 % ω 3 ) was successfully realized using a controlled lateral thickness variation across the wafer. Time-resolved FWM signals from the triple-coupled multilayer cavity were measured using 100 fs laser pulses. The incident laser pulses were divided into two pulses and each of them was spectrally shaped individually so that the input and control pulses only covered the ω 1 and ω 2 modes, respectively. The wavelength-converted FWM signal with a frequency of ω 3 (= 2ω 2 % ω 1 ) was clearly observed when the sample was simultaneously irradiated with the input and control laser pulses.

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A GaAs/AlAs Multilayer Cavity with Self-Assembled InAs Quantum Dots Embedded in Strain-Relaxed Barriers for Ultrafast All-Optical Switching Applications

Cited by 49 publications

References 8 publications

Optical Kerr signals of GaAs/AlAs multilayer cavities with two‐photon resonant quantum wells in the half‐wavelength layer

Optical Kerr signals of GaAs/AlAs multilayer cavities with two‐photon resonant quantum wells in the half‐wavelength layer

Photonic switching devices based on semiconductor nano-structures

GaAs/AlAs triple-coupled cavity with InAs quantum dots for ultrafast wavelength conversion devices

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