A fully integrated 3 V 2.3 GHz synchronous oscillator for WLAN applications

Badets, Franck; Deval, Yann; Bégueret, Jean-Baptiste; Spataro, A.; Fouillat, P.

doi:10.1109/bipol.1999.803546

Cited by 5 publications

(4 citation statements)

References 10 publications

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“…Franck Badets provides in its analysis, an expression of these factors for a common emitter Colpitts oscillator in case of parallel injection. The methodology is described in [9]. The oscillator's synchronization range is hence given by:…”

Section: B Principle Of Synchronizationmentioning

confidence: 99%

An 80GHz range synchronized push-push oscillator for automotive radar application

Ameziane

Taris

Deval

et al. 2010

2010 IEEE Radio Frequency Integrated Circuits Symposium

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In this paper, we present an injection locked oscillator operating at 81GHz and intended for automotive radar applications. The topology of the voltage controlled oscillator (VCO) is based on a push-push topology suitable for millimeter wave applications. The synthesis technique is based on a synchronization throw an external sub-harmonic signal. The reference signal, around 8GHz, is converted before being injected into the oscillator by inductive coupling. We describe in this work, the details of this synchronization technique. The synthesizer is implemented in a 0.13μm SiGe BiCMOS technology from STMicroelectronics. The synchronized oscillator exhibits a maximum locking range of 3GHz from 81GHz to 84GHz and a phase noise around -108dBc/Hz at 10MHz from the carrier frequency. The 1.1mm² circuit chip consumes 60mA under 1.8V supply.

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Section: B Principle Of Synchronizationmentioning

confidence: 99%

An 80GHz range synchronized push-push oscillator for automotive radar application

Ameziane

Taris

Deval

et al. 2010

2010 IEEE Radio Frequency Integrated Circuits Symposium

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“…Nevertheless, though its lowpower behavior, this SiGe Synchronous Oscillator is expected to deliver its RF signal under a 150 MHz bandwidth, a nowadays utopian value for PLL, even for the complex fractional ones. According to both previous test chips [5] and the used SiGe technology, coming up experimental results will doubtless confirm these performances.…”

Section: Resultsmentioning

confidence: 73%

“…While so complex a synthesizer will reach the UMTS 2000 required characteristics, it will also consume too high a current with regards to the a portable application. On the other hand, one can take advantage of the SO [5] to replace the radio frequency (RF) Phase Locked Loop (PLL) in the double-loop synthesizer. Such an approach will result in a lowpower and still quite simple synthesizer, while maintaining high speed performances.…”

Section: The So-based Double-loop Synthesizer Principlementioning

confidence: 99%

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Low-power synchronous oscillator in SiGe technology for UMTS 2000 applications

Deval¹,

Bégueret²,

Fouillat³

et al.

2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522)

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The design of a 2 GHz Synchronous Oscillator (SO) dedicated to UMTS 2000 third generation mobile phones is presented. Taking advantage of a 0.35 µm non-selective epitaxy growth (NSEG) SiGe technology, this SO yields to a low-power double-loop frequency synthesizer. Simulation results highlight the good trade-off obtained between high frequency characteristics and power consumption, which is of strategic importance for portable electronics.

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