Low-power synchronous oscillator in SiGe technology for UMTS 2000 applications

Abstract

The design of a 2 GHz Synchronous Oscillator (SO) dedicated to UMTS 2000 third generation mobile phones is presented. Taking advantage of a 0.35 µm non-selective epitaxy growth (NSEG) SiGe technology, this SO yields to a low-power double-loop frequency synthesizer. Simulation results highlight the good trade-off obtained between high frequency characteristics and power consumption, which is of strategic importance for portable electronics.