A full self-consistent methodology for strain-induced effects characterization in silicon devices

Fantini, Paolo; Ghetti, A.; Carnevale, G.; Bonera, Emiliano; Rideau, D.

doi:10.1109/iedm.2005.1609529

Cited by 9 publications

(8 citation statements)

References 2 publications

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“…by including both surface roughness and surface phonon scattering mechanisms as a function of the average electric field weighted by the carrier concentration. Phonon scattering for electrons and holes has been extensively calibrated to reproduce a large variety of experiments including strain dependent mobility [29,32,33].…”

Section: Numonyx-mcmentioning

confidence: 99%

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

Palestri

Alexander

Asenov

et al. 2009

Solid-State Electronics

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Section: Numonyx-mcmentioning

confidence: 99%

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

Palestri

Alexander

Asenov

et al. 2009

Solid-State Electronics

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“…Fortunately, mechanical quantities vary on a length scale much longer than the physical dimensions of the region important for the current transport (channel length and inversion layer width) [24]. Thus, within this region, we assume the strain tensor to be constant, and use its average value in the channel region to compute strain dependent band structure and scattering rate as explained in the next subsection.…”

Section: A Mechanical and Strain Modelingmentioning

confidence: 99%

“…Phonon scattering for electrons and holes has been extensively calibrated to reproduce a large variety of experiments including strain dependent mobility [24], [38]. As example, the calculated electron bulk mobility is shown in Fig.…”

Section: B Strain Dependent Band Structure and Scatteringmentioning

confidence: 99%

“…As a matter of fact, since the main effects of mechanical strain is band structure deformation, it is enough to use the appropriate strain-dependent band structure that we calculated with an extension of the nonlocal pseudopotential method (EPM) [22] to account also for strain effect [23]. Strain tensor to be used as input of band structure calculation is instead provided by process simulation with full stress history [24]. QM effects are instead accounted for by a correction of the potential provided by the self-consistent solution of the Schrödinger equation [14].…”

Section: Introductionmentioning

confidence: 99%

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Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs

Ghetti

Carnevale

Rideau

2007

IEEE Trans. Nanotechnology

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In this paper we report on a general methodology to investigate nanowire MOSFETs based on the coupling of mechanical simulation with 3-D real-space Monte Carlo simulation. The Monte Carlo transport model accounts for both strain silicon and quantum mechanical effects. Mechanical strain effects are accounted for through an appropriate change of the anisotropic band structure computed with the empirical pseudopotential method. Quantum effects are instead included by means of a quantum mechanical correction of the potential coming from the self-consistent solution of the Schrödinger equation. This methodology has been then applied to the simulation of a test case silicon nanowire n-MOSFET. Impact of mechanical strain and quantum effects on the drive current is investigated. It is shown that only the inclusion of strain and quantum mechanical effects allows a good agreement with experimental data, demonstrating the validity of the proposed methodology for ultimate devices.Index Terms-Monte Carlo simulation, nanowire MOSFET, quantum effects, strained silicon.

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“…In addition, stress-sensitive transistors with a non-critical pattern for defect formation were used to monitor the stress level developed in the process flow when no defects are formed. Indeed, if no dislocations are generated the elastic stress modulates the device performances because it affects the carrier low-field mobility (13), so the transistor current can be used as an elastic stress monitor parameter.…”

Section: Introductionmentioning

confidence: 99%

Mechanical Stress and Defect Formation in Device Processing

Polignano¹,

Carnevale²,

Fantini³

et al. 2006

ECS Trans.

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In this work we address the problem of estimating the mechanical stress and the related risk of crystal defect generation in a complex device process. The validity of numerical calculations of the mechanical stress developed in the device process flow is assessed by comparing the simulation results with the electrical measurements of test structures designed to monitor the dislocations formation and of other silicon strain sensitive structures. The results show that based upon numerical calculations it is possible to define mechanical stress criteria for preventing defect generation. By using this sort of criteria, potentially dangerous process variations can be easily identified. This method is quite general and can be applied to any device process flow. On the other hand, by comparing the electrical results of structures prone to defect generation and of stress-sensitive transistors with a non-critical geometry for defect generation, it is shown that after defect nucleation the elastic stress in non-critical structures and the defect-related failure fraction in critical structures may evolve into opposite directions. Therefore, suitable stress criteria are needed at all the levels in the process flow where crystal damage may cause defect nucleation. In this study it is also pointed out that a high temperature stress release annealing can be beneficial for stress reduction and defect prevention, but its position in the process flow is critical.

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A full self-consistent methodology for strain-induced effects characterization in silicon devices

Cited by 9 publications

References 2 publications

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

A comparison of advanced transport models for the computation of the drain current in nanoscale nMOSFETs

Coupled Mechanical and 3-D Monte Carlo Simulation of Silicon Nanowire MOSFETs

Mechanical Stress and Defect Formation in Device Processing

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