A foundation for complex oxide electronics -low temperature perovskite epitaxy

Abstract

As traditional silicon technology is moving fast towards its fundamental limits, all-oxide electronics is emerging as a challenger offering principally different electronic behavior and switching mechanisms. This technology can be utilized to fabricate devices with enhanced and exotic functionality. One of the challenges for integration of complex oxides in electronics is the availability of appreciable low-temperature synthesis routes. Herein we provide a fundamental extension of the materials toolbox for oxide electronics by reporting a facile route for deposition of highly electrically conductive thin films of LaNiO 3 by atomic layer deposition at low temperatures. The films grow epitaxial on SrTiO 3 and LaAlO 3 as deposited at 225°C, with no annealing required to obtain the attractive electronic properties. The films exhibit resistivity below 100 µΩ cm with carrier densities as high as 3.6 • 10 22 cm −3. This marks an important step in the realization of all-oxide electronics for emerging technological devices.

(BaTiO3)1‐x + (Co0.5Ni0.5Nb0.06Fe1.94O4)x nanocomposites: Structure, morphology, magnetic and dielectric properties

“…Complex oxides based on transitions metals are of great interest for both research and practical applications. [1][2][3] Specific interest to these materials occurred because the interrelationship of structural, charges, spin interactions, and their diverse promising applications. 4 Multiferroics are one of these pertinent materials.…”

“…4 Multiferroics are one of these pertinent materials. 1,2 Ferrite-based compounds are among the highest potential materials that could display excellent magnetic and dielectric properties simultaneously. [5][6][7][8][9] Recently, composites of multiphase and multiferroics materials have attracted considerable attention thanks to its uniqueness to possess both ferroelectric and ferro-or ferrimagnetic phases.…”

Chaos at Interface Brings Order into Oxide/Silicon Structure

“…Low‐temperature (LT) synthesis is an important process in coupling oxides with Si; [ 7 ] LT epitaxy is hailed as a foundation for complex oxide electronics. [ 16 ] Besides obvious advantages related to the energy efficiency and environmental footprint, LT suppresses interfacial reactions as it minimizes the entropic contribution though kinetic factors may also be important. It may indicate that the strong protection of the Si surface by a metal reconstruction is no longer required, milder approaches can be adopted.…”

Fabrication of GdxFeyOz films using an atomic layer deposition-type approach

“…10,11 The best layer uniformity with atomic scale control is effectively achieved by atomic layer deposition (ALD). 12,13 This is a versatile thin film deposition technique that relies on alternate pulsing of chemical precursors that react with the surface species in a self-limiting manner. Hence, the ALD process consists of a repetition of a basic sequence of reactant pulses and purges, i.e.…”