As traditional silicon technology is moving fast towards its fundamental limits, all-oxide electronics is emerging as a challenger offering principally different electronic behavior and switching mechanisms. This technology can be utilized to fabricate devices with enhanced and exotic functionality. One of the challenges for integration of complex oxides in electronics is the availability of appreciable low-temperature synthesis routes. Herein we provide a fundamental extension of the materials toolbox for oxide electronics by reporting a facile route for deposition of highly electrically conductive thin films of LaNiO 3 by atomic layer deposition at low temperatures. The films grow epitaxial on SrTiO 3 and LaAlO 3 as deposited at 225°C, with no annealing required to obtain the attractive electronic properties. The films exhibit resistivity below 100 µΩ cm with carrier densities as high as 3.6 • 10 22 cm −3. This marks an important step in the realization of all-oxide electronics for emerging technological devices.

Resistors are essential parts of futuristic all-oxide electronic architectures, yet easily overlooked due to their apparent simplicity. Herein, design of thin films with specific resistance spanning six orders of magnitude...

Monolithic device integration of crystalline complex oxide thin films can open for smarter and more sustainable devices in electronics and energy technology. However, the facile integration of such compounds has so far been incompatible with the present production lines for electronics. Atomic layer deposition (ALD) is already well-integrated for the production of amorphous binary oxides in electronics, but extending the technique to crystalline complex compounds has proved challenging. Herein, we show how the subcycle arrangement (i.e., the overall order of binary subcycles) plays a crucial role in the formation and quality of crystalline complex oxides by ALD, exemplified by the growth of LaNiO3. We show that an approach somewhere in between the traditional homogeneous and multilayer approaches provides the best platform for crystalline growth. Based on these results, we hypothesize that choosing multilayer unit slab thicknesses close to the interlayer distances in the target crystalline structure, while still maintaining the correct cation composition, enhances as-deposited crystallinity and in turn the functional properties. We believe this approach can be used to extend the toolbox of attainable crystalline complex oxides by ALD and establish utilization of the technique for monolithic integration of functional thin films.