A Fluorinated Thermocrosslinkable Organosiloxane: A New Low<i>‐k</i> Material at High Frequency with Low Water Uptake

Liu, Fengping; Chen, Xingrong; Hou, Jiaren; Sun, Jing; Fang, Qiang

doi:10.1002/marc.202000600

Cited by 40 publications

(57 citation statements)

References 29 publications

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“…The best k value (1.83 for c ‐T 12 B 12 ) obtained here is much lower than current state‐of‐the‐art low‐ k dielectric (i.e., porous SiCOH, k = 2.4) and recently reported low‐ k materials such as fluoropolymers, [ 18,65,66 ] modified polyimide, [ 19 ] MOFs, [ 25,26,67 ] and siloxane containing hybrid materials [ 17,68–70 ] (Table S3, Supporting Information). Although some porous organosilicas have extremely low‐ k values (≈1.7), [ 14,15 ] their further applications are limited by the inferior thermal stability (T d5 < 300 °C) and mesopore (too large pores will allow for metal diffusion through the dielectrics and result in short‐circuiting).…”

Section: Resultsmentioning

confidence: 57%

Polyhedral Oligomeric Silsesquioxanes Based Ultralow‐k Materials: The Effect of Cage Size

Zhou

Guo

et al. 2021

Adv Funct Materials

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Polyhedral oligomeric silsesquioxanes (POSS) are of considerable interest as building blocks for preparing low‐k materials. To date T8 POSS has been extensively investigated while the potential of larger POSS cages remain an unexplored area. Herein, the first known contribution to map the role of POSS cage size on the dielectric and other comprehensive properties of hybrid materials with identical chemical compositions is described. First, three vinyl POSS (T8, T10, and T12) species are isolated from a commercial POSS mixture. Then, they are converted to benzocyclobutene functionalized and thermo‐crosslinked hybrid materials. It is found that the cage size can strongly affect their k values, more importantly, showing a linear decrease while increasing the cage volumes (k = 2.24, 2.02, and 1.83 for c‐T8B8, c‐T10B10, and c‐T12B12, respectively). This finding highlights a profound influence of POSS cage changes on dielectric properties and could be used to predict ultralow‐k (1.5–1.1) materials by extrapolating to larger T14, T16, and T18 POSS cages. Meanwhile, varying the cage size has no obvious effect on the materials’ other properties, and all of them exhibit good comprehensive properties. Moreover, such low‐k values can persist at high temperature and high humidity conditions, which affords some promising (ultra)low‐k dielectrics for modern integrated circuit development.

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Section: Resultsmentioning

confidence: 57%

Polyhedral Oligomeric Silsesquioxanes Based Ultralow‐k Materials: The Effect of Cage Size

Zhou

Guo

et al. 2021

Adv Funct Materials

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“…With the rapid advent of the fifth-generation (5G) mobile communication era, the fast development of large-scale integrated circuits has created an urgent demand for the high performance of interlayer media [1]. However, the resistance-capacitance time delay, the crosstalk noise between lines, and the power dissipation in devices have become the primary bottlenecks in integrated circuit development [2,3]. Therefore, there is a great demand for low dielectric materials as insulating interlayers with good thermal resistance, low water absorption, and excellent mechanical properties for microelectronics.…”

Section: Introductionmentioning

confidence: 99%

Construction of micro-branched crosslink fluorinated polyimide with ultra-low dielectric permittivity and enhanced mechanical properties

Zhao¹,

Cao²,

Huang³

et al. 2022

Express Polym. Lett.

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There is a great demand for low dielectric materials as insulating interlayers in large-scale integrated circuit development. However, it is still a huge challenge to reduce the dielectric permittivity of polymers while maintaining excellent thermal stability and mechanical properties. In this work, the fluorinated polyimides (PIs) in combination with a micro-branched crosslinking structure were prepared successfully by introducing different amounts of 1,3,5-tris(4-aminophenyl) benzene (TAPB) to obtain ultra-low dielectric permittivity. The results revealed that PI film containing 2 mmol TAPB had the lowest dielectric permittivity (2.47) and dielectric loss (0.008) at 1 MHz due to the fluorine atoms and the micro-branched crosslink structure, which not only decreased the molecular polarizability but also increased the free fractional volume. In addition, PI film containing 2 mmol TAPB had the highest tensile strength of 106.02 MPa with an elongation at a break of 15.1% because the presence of TAPB effectively promoted the connection between PI molecular chains, resulting in the inhibition of the molecular mobility. The incorporation of TAPB also enhanced the thermal stability and ultraviolet light-shielding performance of PI films. This method paves the way for the development of PIs with ultra-low dielectric permittivity for the electronic industry.

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“…10 Some materials have a low-k, but their mechanical and thermodynamic properties are not excellent, so their use value is limited. 11,12 Another way is to significantly reduce the k via low-polarity bonds, such as Si C, 13,14 C C, 15,16 C F, 17 and so forth. Compared with other low-k materials, the materials based on carbon-silicon structure can significantly reduce the k and dielectric loss.…”

Section: Introductionmentioning

confidence: 99%

The low dielectric constant hyperbranched polycarbosilane derived resins with spacing groups

Long

Huang

et al. 2022

J of Applied Polymer Sci

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The route via the cross-linking of hyperbranched prepolymers has potential advantage to construct low dielectric constant (low-k) resins owing to the enhanced molecular free volume in hyperbranched structure. However, it is still a challenge to prepare hyperbranched resins with good film-forming property and low-k. In this paper, two hyperbranched polycarbosilanes with reactive benzocyclobutene groups were synthesized via hydrosilylation reaction to avoid the generation of Si O bonds for enabling the low polarity of chemical bonds. The spacing groups including phenyl or ethylene were incorporated into the hyperbranched structures, and the effect of the spacing groups on the physicochemical properties of hyperbranched polycarbosilane derived resins were investigated. The phenyl groups were found to effectively decrease the dielectric constant (k), while endowing the resins with good film forming ability and thermostability. The UV/thermally cured phenyl group resin owing to dual crosslinked structure, the patterns would not be deformed significantly during thermally cured process. Both hyperbranched polycarbosilane derived resins could be potential photoresists.

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A Fluorinated Thermocrosslinkable Organosiloxane: A New Low‐k Material at High Frequency with Low Water Uptake

Cited by 40 publications

References 29 publications

Polyhedral Oligomeric Silsesquioxanes Based Ultralow‐k Materials: The Effect of Cage Size

Polyhedral Oligomeric Silsesquioxanes Based Ultralow‐k Materials: The Effect of Cage Size

Construction of micro-branched crosslink fluorinated polyimide with ultra-low dielectric permittivity and enhanced mechanical properties

The low dielectric constant hyperbranched polycarbosilane derived resins with spacing groups

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