2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) 2019
DOI: 10.1109/wipda46397.2019.8998884
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A Flip-Chip Capable Low-Side and High-Side SOI Gate Driver with Variable Drive Strength for GaN Power FETs

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“…2(a). The monitoring is used for detecting SCs, whereas the monitoring ensures that sufficient gate voltage is provided to the MOSFET [37]- [39]. The undervoltage (UV) fault is to diagnose that the gate drive voltage is sufficient to fully turn on the external MOSFETs.…”
Section: Determination Of the Qualification Timementioning
confidence: 99%
“…2(a). The monitoring is used for detecting SCs, whereas the monitoring ensures that sufficient gate voltage is provided to the MOSFET [37]- [39]. The undervoltage (UV) fault is to diagnose that the gate drive voltage is sufficient to fully turn on the external MOSFETs.…”
Section: Determination Of the Qualification Timementioning
confidence: 99%