A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

Abstract

We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al 2 O 3 /parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m −2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al 2 O 3 /parylene stack does not fail after stressing at a field of 1.7 MV cm −1 for >10 000 s, whereas 'parylene only' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented.

Full bridge circuit based on pentacene schottky diodes fabricated on plastic substrates

“…Diodes with complex structures using organic-based circuits have been reported using pentacene-based organic semiconductor films [10,11]. In particular, rectifier organic Schottky diodes for radio frequency ID (RFID) circuits with high operation frequencies have been demonstrated using photolithographic processes [12].…”

Electromechanical properties of amorphous indium–gallium–zinc-oxide transistors structured with an island configuration on plastic

“…1,2) These electronics could open a new market of form-factor displays, such as ones that fold or roll up, to replace conventional rigidglass-based flat-panel displays. 3,4) In order to realize this novel display platform, new functional features must be incorporated into the component units of an integrated flexible system. An example is the thin-film transistor (TFT) backplane, as its mechanical integrity and robust electrical characteristics against strain could be used toward realizing high-resolution portable displays beyond conventional systems.…”

Highly bendable characteristics of amorphous indium–gallium–zinc-oxide transistors embedded in a neutral plane

“…1,2) Their unique potential form factors, achieved by folding or rolling, also strongly suggest that they are more suitable components for novel small or medium-sized portable displays compared to conventional rigid glass-based flatpanel displays. 3,4) Flexible displays are largely composed of a display element, a thin-film transistor (TFT) backplane, and a flexible substrate; the displays are an integrated system of these units. 1,5) This means that the mechanical flexibility of each element in response to induced physical stress is very important because it reliably enables the overall flexibility of the integrated bending system.…”