A Ferroelectric Nonvolatile Processor with 46 $\mu $ s System-Level Wake-up Time and 14 $\mu $ s Sleep Time for Energy Harvesting Applications

Su, Fang; Liu, Yongpan; Wang, Yudong; Yang, Huazhong

doi:10.1109/tcsi.2016.2616905

Cited by 39 publications

(26 citation statements)

References 19 publications

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“…The CMOS/FeRAM nonvolatile system could achieve 46 μs wake-up time and 14 μs sleep time, with robust nonvolatile operation in the face of power fluctuations. [220] These results show that integration of CMOS circuit and FeRAM, including hybrid FE-SRAM could provide a competitive technical solution for realizing low power distributed sensors, even when they are operated with the intermittent power supply harvested from the uncertain ambient conditions.…”

Section: Ferroelectrics For Low Power Electronics and Edge Computingmentioning

confidence: 87%

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Enabling Distributed Intelligence with Ferroelectric Multifunctionalities

et al. 2021

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Distributed intelligence involving a large number of smart sensors and edge computing are highly demanded under the backdrop of increasing cyber-physical interactive applications including internet of things. Here, the progresses on ferroelectric materials and their enabled devices promising energy autonomous sensors and smart systems are reviewed, starting with an analysis on the basic characteristics of ferroelectrics, including high dielectric permittivity, switchable spontaneous polarization, piezoelectric, pyroelectric, and bulk photovoltaic effects. As sensors, ferroelectrics can directly convert the stimuli to signals without requiring external power supply in principle. As energy transducers, ferroelectrics can harvest multiple forms of energy with high reliability and durability. As capacitors, ferroelectrics can directly store electrical charges with high power and ability of pulse-mode signal generation. Nonvolatile memories derived from ferroelectrics are able to realize digital processors and systems with ultralow power consumption, sustainable operation with intermittent power supply, and neuromorphic computing. An emphasis is made on the utilization of the multiple extraordinary functionalities of ferroelectrics to enable material-critical device innovations. The ferroelectric characteristics and synergistic functionality combinations are invaluable for realizing distributed sensors and smart systems with energy autonomy.

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Section: Ferroelectrics For Low Power Electronics and Edge Computingmentioning

confidence: 87%

“…The CMOS/FeRAM nonvolatile system could achieve 46 µs wake‐up time and 14 µs sleep time, with robust nonvolatile operation in the face of power fluctuations. [ 220 ]…”

Section: Synergized Multiple Ferroelectric Functions For Distributed Intelligencementioning

confidence: 99%

Enabling Distributed Intelligence with Ferroelectric Multifunctionalities

et al. 2021

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“…The nonvolatile flip-flop (NV-FF) is regarded as a potential substitute for the conventional volatile FF [1][2][3][4] because of advantages such as zero standby power consumption in the standby mode (power saving), instant-ON from power-down conditions (userexperience improvement and power saving), instant-OFF to the standby mode (powersaving and nonrequirement of external NV memory), and prevention of sudden power failure (reliability improvement). Among the various NV-FF implementations, spin-transfertorque magnetic tunnel junction (STT-MTJ)-based NV-FFs are considered promising due to their characteristics, including nonvolatility, high endurance, long retention time, CMOS compatibility, scalability, and nil area overhead because of stacking above a MOS transistor [5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region

2021

Micromachines

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To date, most studies focus on complex designs to realize offset cancelation characteristics in nonvolatile flip-flops (NV-FFs). However, complex designs using switches are ineffective for offset cancelation in the near/subthreshold voltage region because switches become critical contributors to the offset voltage. To address this problem, this paper proposes a novel cross-coupled NMOS-based sensing circuit (CCN-SC) capable of improving the restore yield, based on the concept that the simplest is the best, of an NV-FF operating in the near/subthreshold voltage region. Measurement results using a 65 nm test chip demonstrate that with the proposed CCN-SC, the restore yield is increased by more than 25 times at a supply voltage of 0.35 V, compared to that with a cross-coupled inverter-based SC, at the cost of 18× higher power consumption.

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“…This problem is avoided in IoT devices by employing a nonvolatile flip-flop (NVFF) to store the computing data. For this reason, NVFFs have been widely researched by employing various emerging nonvolatile elements, such as field-induced magnetization reversal magnetic tunnel junction (MTJ) [3]- [4], spin-transfer-torque MTJ (STT-MTJ) [5]- [15], complementary polarizer MTJ [16], spin-orbital-torque MTJ [17]- [18], memristor [19]- [22], ferroelectric capacitor (FeCAP) [23]- [26], and ferroelectric field-effect transistor (FeFET) [27]- [28]. Among them, STT-MTJ is suggested to store the computing data as a resistance value (i.e., low and high resistances) before the zero VDD scheme is applied due to its various advantages, such as nonvolatility, high endurance, scalability, and easy integration with CMOS technology [29]- [31].…”

Section: Introductionmentioning

confidence: 99%

Novel MTJ-Based Sensing Inverter Variation Tolerant Nonvolatile Flip-Flop in the Near-Threshold Voltage Region

Choi

2020

IEEE Access

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In recent years, the low power design of Internet of Things devices has become increasingly important. The most basic method to implement a low power design is to reduce static power consumption. In this regard, a spin-transfer-torque magnetic-tunnel-junction-based nonvolatile flip-flop (NVFF) is a promising candidate for storing the computing data while the power is off. However, as the technology node scales down, the process variation increases, leading to a restoration failure in previous NVFFs, especially in the near-threshold voltage (NTV) region. For better energy efficiency when operating the NVFF in the NTV region, this paper presents a novel NVFF that guarantees a target restore yield of 4σ and a target read disturbance margin of 6σ in the NTV region (0.6 V supply voltage), along with auto-zeroing and dynamic reference voltage (DRV) techniques, using only a single capacitor to improve the NVFF's restore yield. The Monte Carlo HSPICE simulation results using industry-compatible 28-nm model parameters show that the proposed NVFF satisfies both the target restore yield and the read disturbance margin, saving 44% restoration time compared with the current state-of-the-art NVFF, which does not satisfy the target restore yield despite having offset cancellation characteristic. INDEX TERMS Auto-zeroing, double sensing margin, dynamic reference voltage (DRV), magnetic tunnel junction (MTJ), near-threshold voltage (NTV), nonvolatile flip-flop (NVFF), sensing inverter variation tolerant (SIVT), sensing margin (SM).

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A Ferroelectric Nonvolatile Processor with 46 $\mu $ s System-Level Wake-up Time and 14 $\mu $ s Sleep Time for Energy Harvesting Applications

Cited by 39 publications

References 19 publications

Enabling Distributed Intelligence with Ferroelectric Multifunctionalities

Enabling Distributed Intelligence with Ferroelectric Multifunctionalities

Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage Region

Novel MTJ-Based Sensing Inverter Variation Tolerant Nonvolatile Flip-Flop in the Near-Threshold Voltage Region

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