A fast small signal modeling method for GaN HEMTs

Zhao, Ziyue; Lu, Yang; Yi, Chupeng; Chen, Yilin; Xi, Cai; Duan, Xiangyang; Ma, Xiaohua; Hao, Yue

doi:10.1016/j.sse.2020.107946

Cited by 13 publications

(2 citation statements)

References 15 publications

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“…In recent years, compound semiconductors have attracted more and more attention 1 . Compared with other materials, GaN materials have the advantages of high electron mobility and breakdown electric field, and large forbidden band width, 2,3 which make GaN high electron mobility transistors (HEMTs) widely used 4–6 . Therefore, an accurate GaN HEMT small‐signal equivalent model with its parameter extraction is very important for the application and development of GaN HEMT devices 7–11 …”

Section: Introductionmentioning

confidence: 99%

A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

Zhai

Cai

Zhang

et al. 2022

Int J RF Mic Comp-Aid Eng

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An improved GaN high electron mobility transistor (HEMT) small-signal equivalent model is proposed. To model the effects of extrinsic parameters that vary with the bias voltage, R L and L ds are added to the model. Moreover, substrate-related parameters (R sub and C sub ) are used to model the substrate effect. In order to avoid damaging the gate under high forward gate pressure conditions, an accurate parasitic parameter extraction method is proposed, which improves the reliability and validity of the parameter extraction. The S-parameters of the proposed model are in good agreement with the measured S-parameters in the range of 0.5-20.5 GHz.

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Section: Introductionmentioning

confidence: 99%

A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

Zhai

Cai

Zhang

et al. 2022

Int J RF Mic Comp-Aid Eng

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“…In particular, as the operating frequency increases, a small-signal equivalent circuit that reflects the S-parameter according to the frequency well is required. Until now, many studies on GaN HEMT modeling have been successfully published [16][17][18][19][20][21][22][23][24][25]. Recently, some papers dealing with GaN HEMT small-signal modeling up to 110 GHz have reported on millimeter-wave monolithic microwave integrated circuit (MMIC) design [22][23][24][25].…”

Section: Introductionmentioning

confidence: 99%

A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

Kim

2021

Applied Sciences

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A new gallium nitride (GaN) high electron mobile transistor (HEMT) small-signal model is proposed considering source via effects. In general, GaN HEMTs adopt a source via structure to reduce device degradation due to self-heating. In this paper, the modified drain-source capacitance (Cds) circuit considering the source via structure is proposed. GaN HEMTs fabricated using a commercial 0.15 μm GaN HEMT process are measured with a 67 GHz vector network analyzer (VNA). The fabricated device is an individual source via (ISV) type. As a result, it is difficult to predict the measured S12 in the conventional small-signal model equivalent circuit. This causes errors in maximum stable gain/maximum available gain (MSG/MAG) and stability factor (K), which are important for circuit design. This paper proposes a small-signal equivalent circuit that adds the drain-source inductance to the drain-source capacitance considering the source via structure. The proposed equivalent circuit better reproduces the measured S12 without compromising the accuracy of other S-parameters up to 67 GHz and improves the accuracy of MSG/MAG and K. It is expected that the proposed model can be utilized in a large-signal model for 5G millimeter-wave GaN HEMT power amplifier design in the future.

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A comparative study on the accuracy of small-signal equivalent circuit modeling for large gate periphery GaN HEMT with different source to drain length and gate width

Anand

Reeta

Rawal

et al. 2021

Microelectronics Journal

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A fast small signal modeling method for GaN HEMTs

Cited by 13 publications

References 15 publications

A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

A reliable parameter extraction method for the augmented GaN high electron mobility transistor small‐signal model

A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

A comparative study on the accuracy of small-signal equivalent circuit modeling for large gate periphery GaN HEMT with different source to drain length and gate width

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