Abstract:A novel mm-wave MEMS single pole single throw (SPST) switch has been developed, which is driven by 5.0 V in 10.3 µs. The insertion loss and the isolation at 60 GHz were 1.2 dB and 18 dB, respectively. A two metal layer silicon interposer technology was also developed. We designed single pole double throw (SPDT) switch module, in which two SPST switch are accommodated on the silicon interposer chip. It consists of 3 µm thick Al wires and 12 µm thick low-k benzocyclobutene (BCB) interlayer dielectrics. They enab… Show more
“…The RF MEMS switch is fabricated by a high-aspect-ratio fabrication sequence and wafer level sealing process and is reported earlier in [12, 13]. Figure 1 shows a scanning electron microscopy (SEM) view of the chip.…”
Section: Design and Analysismentioning
confidence: 99%
“…A wafer level sealing process (0-level packaging) is applied for hermetic vacuum encapsulation at a chamber pressure of the bonding tool of 20 mbar. More details on the fabrication sequence are given by Akiba et al [12] and Kurth et al [13]. Fig.…”
This paper reports on the ohmic contacts of an radio-frequency micro-electro-mechanical-system (RF MEMS) switch. The structure of the MEMS is described briefly to give information about the organization of the switch device. The most significant performance data are reported, indicating very low actuation voltage below 5 V, switching time of <10 µs and good RF performance for frequencies up to 5 GHz. Since the contact performance is a key for excellent RF performance in the actuated state and for high reliability as well the article is focused on the contacts. It is supposed that asperities are building the current path in a closed contact, which is proved by measurements of the closing process with high time resolution. The measurements exhibit very good power-handling capabilities of the contacts. The reported findings render prior theoretical experiments with a physical device.
“…The RF MEMS switch is fabricated by a high-aspect-ratio fabrication sequence and wafer level sealing process and is reported earlier in [12, 13]. Figure 1 shows a scanning electron microscopy (SEM) view of the chip.…”
Section: Design and Analysismentioning
confidence: 99%
“…A wafer level sealing process (0-level packaging) is applied for hermetic vacuum encapsulation at a chamber pressure of the bonding tool of 20 mbar. More details on the fabrication sequence are given by Akiba et al [12] and Kurth et al [13]. Fig.…”
This paper reports on the ohmic contacts of an radio-frequency micro-electro-mechanical-system (RF MEMS) switch. The structure of the MEMS is described briefly to give information about the organization of the switch device. The most significant performance data are reported, indicating very low actuation voltage below 5 V, switching time of <10 µs and good RF performance for frequencies up to 5 GHz. Since the contact performance is a key for excellent RF performance in the actuated state and for high reliability as well the article is focused on the contacts. It is supposed that asperities are building the current path in a closed contact, which is proved by measurements of the closing process with high time resolution. The measurements exhibit very good power-handling capabilities of the contacts. The reported findings render prior theoretical experiments with a physical device.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
