Analysis of Au metal–metal contacts in a lateral actuated RF MEMS switch

Gaitzsch, Markus; Kurth, Steffen; Voigt, Sven; Haas, Sven; Geßner, Thomas

doi:10.1017/s1759078714000993

Cited by 2 publications

(1 citation statement)

References 17 publications

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“…Markus et al (2014) have reported that they have designed a MEMS switch which requires very low pull in voltage as 5V and switching time is less than 10 µs at 5 Ghz. The designed switch is very much usable for RF applications [14]. K. Guha et al (2015), have proposed meander-based switch made up of Aluminum membrane and the study was done for providing very less switching time as 3 µs for actuation voltage of 5V [15].…”

Section: Introductionmentioning

confidence: 99%

Design and simulation of mems shunt capacitive switch for lower switching time

Kurmendra¹,

Kumar²

2019

3C Tecnología

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As Demand of High speed devices increasing for RF and satellite communications with better accuracy, MEMS technology is considerd to be emerging technology to fulfill that need. In this paper, A MEMS shunt capacitive switch with fixed-fixed beam have been designed and simulated for numerous parameters. The parameters for study are Selection of beam material for the switch, air gap distance between electrodes and importantly the actuation voltage. For studying the effect of air gap and beam width on switching time , the air gap was varied from 0.6 µm to 2.0 µm and beam width from 1 µm to 50 µm. For an actuatiuon voltage of 10.5 V and air gap distance of 0.6 µm, switching time result is 0.2 ns for spring constant equal to gold material.Study also considers the effect of increasing beam dimension in terms of width for a constant gap height. This syudy will be helpful for designing a MEMS capactitive switch for higher speed and for selection of proper dimension to get better performance.

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Section: Introductionmentioning

confidence: 99%

Design and simulation of mems shunt capacitive switch for lower switching time

Kurmendra¹,

Kumar²

2019

3C Tecnología

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A 3D contact analysis approach for the visualization of the electrical contact asperities

Roussos

Swingler

2017

AIP Advances

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The electrical contact is an important phenomenon that should be given into consideration to achieve better performance and long term reliability for the design of devices. Based upon this importance, the electrical contact interface has been visualized as a ‘‘3D Contact Map’’ and used in order to investigate the contact asperities. The contact asperities describe the structures above and below the contact spots (the contact spots define the 3D contact map) to the two conductors which make the contact system. The contact asperities require the discretization of the 3D microstructures of the contact system into voxels. A contact analysis approach has been developed and introduced in this paper which shows the way to the 3D visualization of the contact asperities of a given contact system. For the discretization of 3D microstructure of contact system into voxels, X-ray Computed Tomography (CT) method is used in order to collect the data of a 250 V, 16 A rated AC single pole rocker switch which is used as a contact system for investigation.

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Analysis of Au metal–metal contacts in a lateral actuated RF MEMS switch

Cited by 2 publications

References 17 publications

Design and simulation of mems shunt capacitive switch for lower switching time

Design and simulation of mems shunt capacitive switch for lower switching time

A 3D contact analysis approach for the visualization of the electrical contact asperities

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