A facile thermal evaporation route for large-area synthesis of tin oxide nanowires: Characterizations and their use for liquid petroleum gas sensor

Disorder induced interface states and their influence on the Al/Ge nanowires Schottky devices

“…As an example, a device made from several nanowires is suitable for practical applications such as sensors since it has a better signal-to-noise ratio, a larger activation area, and a longer lifetime, being easier not only to manipulate but also to integrate with other devices. [26][27][28] In this sense a four-terminal device was fabricated in which the active elements are the oxide-capped germanium nanowires. Figure 2 depicts data on temperaturedependent transport measurements and a sketch of the Gebased device.…”

On-chip fabrication of SnO2-nanowire gas sensor: The effect of growth time on sensor performance

“…Subsequently, the quartz tube was evacuated to 10 −2 Torr again, and the furnace temperature was increased from room-temperature to 800 • C for 30 min. It should be noted that the Ar gas-flow was not introduced during this step for the large-scale growth of SnO 2 nanowires [24]. Soon after the growth temperature was obtained, oxygen gas was added to the quartz tube at a flow rate of 0.3 sccm and the growth process was maintained for 15, 30 and 60 min for different sensors (namely: 15 min sensor, 30 min sensor, and 60 min sensor).…”

“…The size of the Pt electrode and the distance between fingers was ∼20 m. Au layer (∼5 nm) deposited on the Pt electrode was used as a catalyst for the growth of SnO 2 nanowires. The synthesis of SnO 2 nanowires was described in detail elsewhere [24]. In brief, the nanowires were grown in a quartz tube located in a horizontal furnace (Lingdberg/Blue M, Model: TF55030A, USA).…”

“…In our previous paper [24] we have successfully synthesized large-area nanowires of SnO 2 through the evaporation of Sn powders in an oxygen environment and used them for LPG sensor application. This synthesis method allowed for the fabrication of large-area of nanowires SnO 2 on a silicon substrate at a moderate temperature (∼750 • C) because it made use of a low-evaporation temperature source (Sn).…”

Facile fabrication of morphology-tunable SnO nanostructures by catalyst-free growth

“…According to literature reports, the origin of the blue band is related to structural defects and surface oxygen vacancies [13][14][15][16]. The broad peak at 620 nm is related to the crystalline defects leading to the interaction of oxygen vacancies with tin interstitials, forming a substantial amount of trapped states in the bandgap [17][18][19]. On the other hand, the intensity of the broad 620 nm band of SnO x grown at 925 1C (red color in Fig.…”